Sputtering apparatus

Abstract

The invention provides a sputtering apparatus, which comprises a technology chamber, a magnetron and a pedestal for bearing a substrate, the magnetron and the pedestal are arranged in the technology chamber, the magnetron is positioned over the pedestal, wherein the sputtering apparatus also comprises a magnetic element, the magnetic element is arranged at a preset position in the technology chamber for increasing the magnetic field intensity of the preset position; and the preset position is determined according to a material of a target material between the magnetron and the pedestal. When the sputtering apparatus is used for depositing a film layer on the substrate, target material atoms or molecules move by deflecting the preset position, resistivity of the film layer at the preset position is increased, resistivity uniformity of the deposited film layer can be integrally improved, and the film thickness uniformity and the square resistance uniformity of the film layer is improved.

Description

technical field [0001] The present invention relates to the field of semiconductor equipment, in particular to a sputtering device. Background technique [0002] Physical vapor deposition (PVD) generally refers to the film preparation process that uses physical methods to prepare film layers. Physical vapor deposition technology can be applied to many process fields, such as copper interconnection technology and through silicon via (TSV) in the packaging field. ) technology, etc. [0003] Sputtering deposition technology is a typical physical vapor deposition method, figure 1 It is a schematic cross-sectional view of a typical sputtering device. Such as figure 1 As shown, the sputtering device mainly includes: a process chamber 1, a vacuum system 10, a target material 3, a cooling chamber 4 for cooling the target material, a base 14, a magnetron 6, and a motion track for controlling the magnetron 6 The power source 5. During the process, some atoms or molecules of the t...

AI Technical Summary

Problems solved by technology

[0006] However, when depositing a reactive sputtering film, such as a TiN film, even if the thickness of the film deposited on the substrate is the same everywhere, the resistivity of the film is still different.

Images