Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Organic thin-film solar cell based on dual mixed active layers and preparation method thereof

A technology of solar cells and organic thin films, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems that the FF of solar cells is not particularly high and the transmission is not enough, so as to increase the absorption range, improve the utilization efficiency, and improve the transmission efficiency. Effect

Inactive Publication Date: 2015-06-24
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF5 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the FF of solar cells formed by such a structure is still not particularly high, and some excitons are still too short to be transmitted, and the game between the thickness of the active layer and the length of the excitons still exists.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Organic thin-film solar cell based on dual mixed active layers and preparation method thereof
  • Organic thin-film solar cell based on dual mixed active layers and preparation method thereof
  • Organic thin-film solar cell based on dual mixed active layers and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] Device structure such as figure 1 shown. The material, thickness and doping ratio of each layer of the device are: the transparent substrate is glass, the transparent anode electrode is ITO, the thickness is 180nm; the anode modification layer is PEDOT:PSS, the thickness is 30nm; the mixed active layer is TTPA, the thickness is 30nm; mixed active layer 2 is SubPc:C60=1:4, with a thickness of 60nm; the electron buffer layer is Bphen, with a thickness of 5nm; the cathode electrode is Ag, with a thickness of 130nm.

[0045] Its preparation method is as follows:

[0046] ① Sputter the glass substrate of transparent anode electrode ITO with detergent, acetone solution, deionized water and ethanol solution for super

[0047] Acoustic cleaning, blow dry with dry nitrogen after cleaning;

[0048] ② Move the above-mentioned transparent anode ITO substrate into a vacuum chamber, and perform plasma treatment on the transparent anode ITO glass for 5 minutes under the pressure of...

Embodiment 2

[0055] Device structure such as figure 1 shown. The material, thickness and doping ratio of each layer of the device are: the transparent substrate is glass, the transparent anode electrode is ITO, and the thickness is 180nm; the anode modification layer is PEDOT:PSS, and the thickness is 30nm; the mixed active layer one is TTPA:SubPc= 3:1, the thickness is 30nm; the mixed active layer 2 is SubPc:C60=1:4, the thickness is 60nm; the electronic buffer layer is Bphen, the thickness is 5nm; the cathode electrode is Ag, the thickness is 130nm.

[0056] The preparation process is basically similar to that of Example 1, except that when the mixed active layer 1 is evaporated, the evaporation rate of TTPA is 3 times that of SubPc.

Embodiment 3

[0058] Device structure such as figure 1 shown. The material, thickness and doping ratio of each layer of the device are: the transparent substrate is glass, the transparent anode electrode is ITO, the thickness is 180nm; the anode modification layer is PEDOT:PSS, the thickness is 30nm; the mixed active layer 1 is TTPA:SubPc =1:1, the thickness is 30nm; the mixed active layer 2 is SubPc:C60=1:4, the thickness is 60nm; the electronic buffer layer is Bphen, the thickness is 5nm; the cathode electrode is Ag, the thickness is 130nm.

[0059] The preparation process is basically similar to that of Example 1, except that when evaporating the mixed active layer 1, the evaporation rate of TTPA is the same as that of SubPc.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an organic thin-film solar cell based on dual mixed active layers and a preparation method thereof. The organic thin-film solar cell is of a positive type structure and sequentially comprises a transparent substrate, a transparent anode electrode, an anode modification layer, the first mixed active layer, the second mixed active layer, an electronic buffer layer and a cathode electrode from bottom to top. The first mixed active layer is formed by doping P-type materials with double materials. The second mixed active layer is formed by doping double materials with N-type materials. The P-type, N-type and double materials are doped to form the dual heterojunction type active layers so as to absorb light of different wavebands, and meanwhile the advantages of the bulk heterojunction and the advantage of connecting the double materials with the P-type and N-type materials to form the dual heterojunction are utilized, so that the solar cell greatly improves the device light absorption efficiency, increases the absorption wavelength, improves exciton transmission and separation efficiency, and finally improves the conversion efficiency.

Description

technical field [0001] The invention belongs to the field of organic solar cells, in particular to an organic thin film solar cell based on a double-layer mixed active layer and a preparation method thereof. Background technique [0002] With the global energy demand increasing year by year, the effective use of renewable energy has become an urgent problem to be solved. At present, most of the energy used in the world comes from the exploitation of fossil energy, including oil, natural gas and coal. However, these resources are limited. In contrast, solar energy, which accounts for more than 99% of the total energy of the earth, has the characteristics of inexhaustibility, inexhaustibility, and no pollution, so it has become one of the green new energy sources developed and utilized by scientists all over the world. Solar cells are photovoltaic devices that convert solar energy into electrical energy. Among them, the technology of inorganic solar cells is relatively matur...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/48H01L51/46H01L51/44
CPCY02E10/549
Inventor 钟建干逢雨邓广源傅鹏龚宸
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com