IGBT module steady state temperature calculating method

Abstract

The invention discloses an IGBT module steady state temperature calculating method. The IGBT module steady state temperature calculating method comprises the following steps that an IGBT module loss is calculated; an IGBT module thermal characteristic parameter is input; an IGBT module radiating system thermal way model is established, and the thermal way model comprises an IGBT module, thermal conducting contact materials and a radiator; the IGBT module temperature is confirmed. According to the IGBT module steady state temperature calculating method, an equivalent thermal way model generated by the end thermal conducting characteristic mathematical approximation method in the prior art is avoided, the steady state calculation accuracy is guaranteed, and meanwhile the distortion and the error which are caused by non-physical thermal resistance and thermal capacity are avoided; the defects that a field domain calculation model is huge in calculation workload and severe in time consumption are avoided, and the working efficiency of the system design based on the IGBT module is improved.

Description

technical field [0001] The invention relates to a steady-state temperature calculation method, in particular to a steady-state temperature calculation method of an IGBT module. Background technique [0002] An insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) is a power electronic device that can be turned on and off by a control signal. An IGBT has three terminals: a gate terminal (G) and two load terminals emitter (E), collector (C). By applying an appropriate voltage between the gate and the emitter, the IGBT can control the current flow in one direction, that is, turn on and turn off. Since the IGBT device cannot withstand back pressure, in industrial applications, a freewheeling diode is generally connected in parallel between the two load terminals of the IGBT device and packaged together to form an IGBT module. IGBT has the characteristics of high input impedance, low driving power, simple control circuit, fast speed and high operating freq...

AI Technical Summary

Problems solved by technology

[0006] (1) These methods focus on the trend of temperature changes, require complex calculation conditions and the parameters are not easy to obtain;

[0007] (2) The value and arrangement of heat capacity parameters have a great influence on the calculation accuracy, which is prone to errors;

[0008] (3) It is difficult to obtain model parameters, which cannot be obtained by ordinary users;

[0009] (4) The model calculation workload is huge and takes a long time

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