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(NH4) 2TiF6 doped boryl hydrogen storage material and preparation method thereof

A hydrogen storage material and ball milling technology, applied in the production of hydrogen, etc., can solve problems restricting industrial applications, and achieve the effect of easy operation and simple doping process

Active Publication Date: 2015-06-24
GUILIN UNIV OF ELECTRONIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, under normal pressure, the initial dehydrogenation temperature of LiBH4 is as high as 300 ℃, which seriously restricts its industrial application.

Method used

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  • (NH4) 2TiF6 doped boryl hydrogen storage material and preparation method thereof
  • (NH4) 2TiF6 doped boryl hydrogen storage material and preparation method thereof
  • (NH4) 2TiF6 doped boryl hydrogen storage material and preparation method thereof

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Experimental program
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Embodiment 1

[0020] Embodiment 1: with (NH 4 ) 2 TiF 6 As complexing agent and catalyst for LiBH 4 doping.

[0021] Weigh 0.1g (NH 4 ) 2 TiF 6 and 0.9 g LiBH 4 , put it into a ball mill jar with a capacity of 100mL, put 20 steel balls with a diameter of 10 mm into the ball mill jar, and ensure that the ball-to-material ratio is 100:1. Put the ball mill jar in the ball mill, set the rotating speed to 300 r / min, and the time is 4 hours, and the final sample obtained is 9(NH 4 ) 2 TiF 6 :LiBH 4 Composite hydrogen storage materials.

[0022] For the prepared 9(NH 4 ) 2 TiF 6 :LiBH 4 The XRD phase characterization of the composite hydrogen storage material was carried out with an X-ray diffractometer (X’Pert MPD PRO, CuKa, 40 kV, 40 mA).

[0023] The XRD characterization results show that there are still (NH 4 ) 2 TiF 6 diffraction peaks, but LiBH 4 The diffraction peaks disappear, indicating that LiBH 4 Amorphous changes occur during ball milling, or with (NH ...

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Abstract

The invention relates to a novel (NH4) 2TiF6-LiBH4 composite hydrogen storage material prepared through carrying out complexing and catalyzing on LiBH4 by taking (NH4) 2TiF6 as a complexing agent and a catalyst, which belongs to the field of material invention. The composite material is prepared by using a mechanical ball milling method, when the doping content of (NH4)2TiF6 is 1-20 wt%, the initial dehydrogenation temperature of the material is reduced to 65 DEG C, constant-temperature dehydrogenation is performed at the temperature of 90 DEG C, and the dehydrogenation amount in 160 minutes reaches 3.9 wt %, and the dehydrogenation activation energy of the material is also reduced. The composite hydrogen storage material prepared by ball milling according to the invention has a good dehydrogenation performance, and due to the doping of (NH4) 2TiF6 as a complexing agent and a catalyst, the LiBH4 efficient hydrogen storage material is improved to show a good dehydrogenation performance at a low temperature.

Description

technical field [0001] The present invention relates to hydrogen storage materials, specifically a kind of (NH 4 ) 2 TiF 6 Doped boron-based hydrogen storage material and preparation method thereof. Background technique [0002] Research and development of efficient and safe hydrogen storage materials is crucial to realize an environmentally friendly "hydrogen economy". In the past decade, light metal borohydrides such as LiBH 4 , Mg(BH 4 ) 2 , Ca(BH 4 ) 2 etc., because of their high mass and volume hydrogen storage density, they have received extensive attention from scientists. where LiBH 4 13.8 wt% hydrogen can be released by heating, which makes it a potential hydrogen storage material. But at atmospheric pressure, LiBH 4 The initial dehydrogenation temperature is as high as 300 °C, which seriously restricts its industrial application. In order to overcome this difficulty, scientists have studied a large number of strategies. [0003] Among them, through the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B3/02
Inventor 孙立贤李志宝徐芬孙一新姜侠王自强
Owner GUILIN UNIV OF ELECTRONIC TECH
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