Radio frequency LOMOS device for overcoming electricity leakage and manufacturing method of radio frequency LOMOS device for overcoming electricity leakage

Abstract

The invention discloses a radio frequency LOMOS device for overcoming electricity leakage. A silicide barrier layer is arranged on a gate oxide layer, and a shielding ring barrier layer is arranged on the silicide barrier layer. A leading-out terminal adhesion layer is arranged on a drain electrode, and a drain electrode leading-out terminal is arranged on the leading-out terminal adhesion layer. A shielding ring adhesion layer is arranged on a shielding ring dielectric layer, and a metal Faraday shielding ring is arranged on the shielding ring adhesion layer. The leading-out terminal adhesion layer and the shielding ring adhesion layer are made of same polycrystalline silicon or titanium materials. The drain electrode leading-out terminal and the metal Faraday shielding ring are made of same metal or metal silicide materials. The invention further discloses a manufacturing method of the radio frequency LOMOS device. By means of the radio frequency LOMOS device and the manufacturing method, lesser electricity can be leaked, the shielding effect can be strengthened, and the product reliability is improved.

Description

technical field [0001] The present application relates to a semiconductor device, in particular to an LDMOS (Laterally Diffused MOS Transistor) device. Background technique [0002] see figure 1 , which is an existing RF LDMOS device. There is a p-type lightly doped epitaxial layer 2 on the p-type silicon substrate 1 . An n-type drift region 6 and a p-type channel region 7 are provided in this epitaxial layer 2 . In the drift region 6 there is an n-type heavily doped drain 8b, and on the drain 8b there is a drain metal silicide 11b. In the channel region 7 there is an n-type heavily doped source 8a and a p-type heavily doped body region lead-out 9, and a source metal silicide 11a is located above them. In addition to the position of the source metal silicide 11a and the drain metal silicide 11b, there are gate oxides on the epitaxial layer 2, the drift region 6, the channel region 7, the source electrode 8a, the drain electrode 8b and the body region terminal 9. Layer 3...

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Problems solved by technology

[0006] The technical problem to be solved in this application is to provide a new type of RF LDMOS device structure, which can solve the problem of incomplete shielding of the stepped metal Faraday shielding ring, and can also ensure low gate resistance and avoid heavy doping of the drain Silicon is consumed in large quantities resulting in leakage

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