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MOCVD equipment real-time temperature measurement system self-calibration method

A self-calibration and equipment technology, which is applied in the field of self-calibration of MOCVD equipment real-time temperature measurement system, can solve the problems of temperature deviation, epitaxial wafer growth temperature measurement cannot be consistent and accurate, etc.

Active Publication Date: 2015-06-10
北京艾瑞豪泰信息技术有限公司
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Problems solved by technology

These effects will change the signal detected by the temperature measurement system, causing systematic temperature deviation, resulting in the inability to guarantee consistent and accurate epitaxial wafer growth temperature measurement

Method used

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  • MOCVD equipment real-time temperature measurement system self-calibration method
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  • MOCVD equipment real-time temperature measurement system self-calibration method

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Embodiment Construction

[0054] In order to deeply understand the present invention, the present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0055] See attached figure 2 , the MOCVD equipment real-time temperature measurement system self-calibration method provided by the present invention comprises the following steps:

[0056] Step 1: According to the actual heat radiation ratio, in the attached figure 1 The points corresponding to the actual thermal radiation ratio are traced on the theoretical thermal radiation ratio-temperature curve shown;

[0057] Step 2: Substitute the value of temperature T corresponding to the point into

[0058] L ( λ 1 , T ) = m 1...

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Abstract

The invention discloses an MOCVD equipment real-time temperature measurement system self-calibration method and belongs to the technical field of semiconductor manufacture. The method includes according to an actual heat radiation ratio, arranging a point according to the actual heat radiation ratio on a theoretical heat radiation ratio-temperature curve trace, substituting the temperature value T corresponding to the point into a calculation formula, and acquiring calibration coefficients m1 and m2. By the aid of the method, the calibration coefficients m1 and m2 corresponding to a first wavelength lamda 1 and second wavelength lamda 2 of a dual wavelength temperature measurement structure can be acquired, the MOCVD equipment real-time temperature measurement system self calibration is implemented, and the consistence and accuracy of epitaxial film growth temperature measurement can be guaranteed.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a self-calibration method for a real-time temperature measurement system of MOCVD equipment. Background technique [0002] Epitaxial wafer growth temperature is a key parameter for MOCVD production performance control. Due to the strict reaction conditions of MOCVD, high vacuum, high temperature, chemically active growth environment, high-speed rotating substrate, and strict equipment space layout, it is almost impossible to use thermocouples and other direct temperature measurement technologies. Therefore, It must rely on non-contact thermometry to measure the epitaxial wafer growth temperature. The non-contact temperature measurement method used in the prior art is a high-temperature measurement method corrected by the thermal emissivity coefficient, and calculates the surface temperature of the epitaxial wafer by measuring the radiated light of a certain b...

Claims

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Application Information

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IPC IPC(8): G01J5/00G01J5/08
Inventor 严冬李成敏王林梓刘健鹏焦宏达张塘马小超
Owner 北京艾瑞豪泰信息技术有限公司
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