HBT (heterojunction bipolar transistor) circuit chip temperature analysis method based on MATLAB (matrix laboratory) programming

Abstract

The invention discloses an HBT (heterojunction bipolar transistor) circuit chip temperature analysis method based on MATLAB (matrix laboratory) programming. The method mainly solves the problems of small circuit scale and complicated manual input power consumption of the traditional finite element analysis method. The method comprises the following major steps that 1, the geometric dimension of an HBT device and the material heat conductivity are obtained; 2, the device is subjected to modeling, and in addition, the single device is subjected to finite element temperature analysis; 3, the temperature distribution of each device is subjected to function fitting; 4, circuit software is used for simulation, the power consumption of each device is obtained, and is marked on a territory; 5, a GDSII format territory file is exported, and then, the format is converted into a DXF format; 6, the MATLAB programming is used, the coordinate and the power consumption of the devices on the territory are extracted, the work temperature of each device is calculated, and a temperature distribution figure is made. The HBT circuit chip temperature analysis method has the advantages that the method can be used for the integrated circuit physical design time and can be used for predicting the stable state temperature of the HBT device in the work process of the circuit and the hotspot positions on the territory, and the work stability of the circuit is improved.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a temperature analysis method for a heterojunction bipolar transistor (HBT) circuit chip, which can be used to guide the back-end layout design of an integrated circuit. technical background [0002] With the rapid development of semiconductor manufacturing technology, more and more devices are included in the unit area of ​​integrated circuits, which leads to higher power density on the chip and higher operating temperature of the chip. Compared with CMOS silicon devices, the heterojunction bipolar transistor (HBT) device has a larger operating current and more obvious self-heating effect. Studies have shown that 55% of the device failures in all current chips are caused by the temperature exceeding the specified value. [0003] In the process of layout design of integrated circuits, in order to avoid the concentration of hot spots on the layout, it is nece...

AI Technical Summary

Problems solved by technology

However, for the thermal distribution analysis of the chip, due to the large number of devices on the chip, under the current computer hardware and software conditions, it is impossible to use finite element analysis software to analyze the temperature of large-scale circuits, which affects the reliability of the circuit when it is working.

Even for analyzing small-scale circuits, manually entering power consumption information is extremely time-consuming and labor-intensive

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