Flash memory array management method and device

Abstract

The invention is applicable to the technical field of computer data storage and provides a flash memory array management method and device. The flash memory array management method comprises the steps of dividing a flash memory array into n physical working groups, wherein the same pages of all flash memories in the same physical working group are combined to form a physical combined page, and the same blocks of all flash memories in the same physical working group are combined to form a physical combined block; dividing a logic space into a plurality of logic pages according to the size of the physical combined page, dividing the multiple obtained logic pages into n logic working groups corresponding to the physical working groups, performing re-addressing according to logic addresses of the logic pages of the same logic working group to obtain logic combined pages; managing the logic combined pages in the logic working groups and the physical combined page in the corresponding physical working groups in a dynamic mapping mode so as to achieve reading and writing of the flash memory array. By means of the flash memory array management method and device, the storage space occupied by a mapping table is decreased, and write-in and amplification caused by block mapping are decreased.

Description

technical field [0001] The invention belongs to the technical field of computer data storage, and in particular relates to a flash memory array management method and device. Background technique [0002] Nand-Flash is a non-volatile flash memory. The storage system using Nand-Flash as the storage medium has the advantages of fast access speed, strong shock resistance, low power consumption, low heat generation, zero noise and small size. It is widely used in Military, automotive, industrial control, medical, aviation, consumer electronics and other fields. Nand-Flash chips are divided into two types: single-level storage (Single Level Cell, SLC) and multi-level storage (Multi-level Cell, MLC). With the advancement of technology, the storage capacity of single-chip Nand-Flash is also increasing. At present, the storage capacity of single-chip Nand-Flash has reached 32GB or even higher, which is enough to meet the application fields that do not require high storage capacity ...

AI Technical Summary

Problems solved by technology

[0005] The embodiment of the present invention provides a flash memory array management method and device, aiming to solve the problem that the existing flash memory array management method needs to occupy a large amount of storage space to run and store the mapping table, and the number of erasures is too many, which affects the service life.

Images