High-speed low-power-consumption multi-threshold-value D-type trigger

Abstract

The invention discloses a high-speed low-power-consumption multi-threshold-value D-type trigger. The high-speed low-power-consumption multi-threshold-value D-type trigger comprises a low-power-consumption control circuit for receiving a low-power-consumption control input signal slp, conducting buffer processing on the low-power-consumption control input signal slp and then outputting signals sleep and nsleep, a master latch for receiving a data input signal d, a normal phase input clock signal clk, a reverse phase input clock signal nclk and signals sleep and nsleep, and a slave latch for receiving a signal qt, the normal phase input clock signal clk and the reverse phase input clock signal nclk, wherein the master latch conducts latching on the data input signal d under the control of the normal phase input clock signal clk and the reverse phase input clock signal nclk and then outputs the signal qt, and the slave latch conducts latching on the signal qt under the control of the normal phase input clock signal clk and the reverse phase input clock signal nclk and then outputs a first output signal q and a second output signal nq respectively. The high-speed low-power-consumption multi-threshold-value D-type trigger has the advantages of being simple in structure, capable of improving transmission efficiency, reducing static leakage current and power consumption and the like.

Description

technical field [0001] The invention mainly relates to the field of large-scale integrated circuit design, in particular to a high-speed, low-power consumption multi-threshold D-type flip-flop. Background technique [0002] With the continuous improvement of process technology, VLSI design has entered the deep submicron stage. The reduction of the feature size will inevitably lead to the decrease of the threshold voltage of the MOS device, so that the leakage current of the circuit increases exponentially with the reduction of the feature size, which directly causes the rapid increase of the leakage current power consumption of the circuit. Static power consumption caused by leakage current cannot be ignored. [0003] For systems operating in the GHz range, the power consumption reaches tens of watts, or even hundreds of watts. Excessive power consumption has brought a series of problems and has become an important obstacle to the development of VLSI. High power consumpti...

AI Technical Summary

Problems solved by technology

Although it can reduce a certain power consumption, the tube itself will consume a certain amount of energy, and will increase the area of ​​the circuit and increase the complexity of the circuit design.

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