Negative electron affinity cold cathode X-ray tube
An X-ray tube and cold cathode technology, which is applied in the directions of X-ray tube electrodes, X-ray tube cold cathodes, X-ray tube parts, etc., can solve complex external incident light generating devices and light coupling systems, reduce product reliability To avoid problems such as stability, increase product cost, etc., to avoid beam instability, excellent reliability, and compact structure
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[0023] Control attached image 3 The right column only uses GaAs cathode as an example to further illustrate the present invention.
[0024] The preparation method of the GaAs negative electron affinity potential cold cathode X-ray tube, the material is grown by MOCVD, and the GaAs (100) substrate is used; the following process steps are included:
[0025] (1) On the N-type heavily doped GaAs substrate 11, use MOCVD to grow the N-type heavily doped GaAs layer 12, wherein the thickness of GaAs is 100 nm, and 6E18 cm-3 silicon is doped;
[0026] (2) Next grow a P-type doped GaAs layer 13, in which GaAs has a thickness of 50 nm and is doped with 1E18 cm-3 zinc;
[0027] (3) After the material growth is completed, the method for preparing the negative electron affinity cold cathode assembly includes the following process steps:
[0028] 1) Deposit the ITO layer on the glass substrate, the light transmittance of the ITO layer is required to be about 90%, and the conductivity is g...
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