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Ku-waveband power amplifier

A power amplifier and ku-band technology, applied in the field of Ku-band power amplifiers, can solve the problems of limited number of solid-state devices, inability to meet the transmission power requirements of scattering communication, etc. Effect

Active Publication Date: 2015-04-29
NO 54 INST OF CHINA ELECTRONICS SCI & TECH GRP
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the power amplifiers widely used in the Ku frequency band of the scatter communication system are mostly planar circuit synthesis. Due to the transmission line loss and the circuit structure increasing non-linearly with the increase of the number of devices, the number of solid-state devices that can be synthesized is limited, which cannot meet the requirements of scatter communication. Transmit power requirements

Method used

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Embodiment Construction

[0021] The present invention will be further described in detail below with reference to the drawings and specific embodiments.

[0022] figure 1 It is a schematic diagram of the split structure of a Ku-band power amplifier of the present invention, figure 2 It is a cross-sectional view of the power amplifier of the present invention. The present invention is a Ku-band power amplifier. It includes an upper box body 1, a middle box body 3 and a lower box body 5. The upper box body 1 is equipped with an upper power amplifier printed board 2, and a lower box The lower power amplifier printed board 6 is installed in the body 5. The upper box body 1, the middle box body 3 and the lower box body 5 are buckled in sequence to form a closed rectangular input waveguide and a rectangular output waveguide. The waveguide input and output ports 4 receive external radio frequency signals.

[0023] image 3 It is the PCB diagram of the power amplifier printed board of the present invention. image...

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Abstract

The invention discloses a Ku-waveband power amplifier. The Ku-waveband power amplifier comprises an upper box body, a lower box body and a middle box body, wherein power amplification printed boards are arranged on the upper box body and the lower box body respectively; the middle box body is provided with an isolating cavity; the power amplification printed boards are provided with input aligning lines, input anti-resonance tuning blocks, power amplification units, output aligning lines and output anti-resonance tuning blocks; the micro-strip output ends of the input aligning lines are connected with the input ends of the power amplification units; the micro-strip input ends of the output aligning lines are connected with the output ends of the power amplification units. A circuit is assembled in a three-dimensional way, so that integration of input power distribution, power amplification and output power synthesis is realized. The Ku-waveband power amplifier is molded integrally, so that the influences of human factors on assembly are reduced, the assembly flow is reduced, the equipment quality is enhanced, and the stability of a system is improved.

Description

Technical field [0001] The invention relates to a Ku-band power amplifier in the communication field, in particular to a Ku-band 40W power amplifier, which is particularly suitable for a transmission device that completes radio frequency signal power amplification in the transmission channel of a Ku-band communication system. Background technique [0002] With the development of scatter communication technology, the requirements for the transmission power of Ku-band communication systems are increasing. At present, most of the power amplifiers widely used in the Ku band of the scattering communication system are planar circuit synthesis. Due to the loss of transmission line and the circuit structure, the circuit synthesis increases nonlinearly with the increase of the number of devices. The number of solid-state devices that can be synthesized is limited and cannot meet the requirements of scattering communication. Transmit power requirements. Summary of the invention [0003] Th...

Claims

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Application Information

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IPC IPC(8): H03F3/20H03F1/00
Inventor 杨作成张志忠王晓龙张静李楠朱秀敏王晓明杨贺
Owner NO 54 INST OF CHINA ELECTRONICS SCI & TECH GRP
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