Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Czochralski crystal growth furnace

A technology of crystal growth furnace and pulling method, which is applied in the directions of crystal growth, single crystal growth, and self-melting liquid pulling method, etc. It can solve the problems of unstable cooling gas and the accumulation of impurities in inclusions in the melt, and achieve the suppression of natural The effect of convection intensity, reduction of inclusion impurities, and avoidance of excessive thermal stress

Active Publication Date: 2015-04-29
HUAZHONG UNIV OF SCI & TECH
View PDF4 Cites 19 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides a pulling method crystal growth furnace, which solves the problems of instability caused by the asymmetric flow of cooling gas in the existing pulling method crystal growth furnace and the accumulation of inclusion impurities in the melt in the crystal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Czochralski crystal growth furnace
  • Czochralski crystal growth furnace

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The present invention will be further described below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention.

[0021] Such as figure 1 As shown, the present invention includes a furnace body 1, a base 2, an inner insulation layer 3, an electromagnetic induction heater 4, a furnace cover 5, a crucible 6, a crucible cover 7 and a seed rod 8;

[0022] The furnace body 1 is a cylinder, the base 2 is fixedly connected to the bottom of the furnace body 1 and closed, the center of the base has an air inlet channel 2A, and the inner heat insulation layer 3 is also a cylinder, It is located on the base 2 of the furnace body and forms a coaxial sandwich structure with the furnace body. The annular cavity between the furnace body and the inner heat insulation layer is filled with side wall heat insulation material 9, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a Czochralski crystal growth furnace, belongs to Czochralski crystal growth devices, and solves the problems of instability caused by the asymmetric flowing of cooling gas in the existing Czochralski crystal growth furnace and aggregation of inclusion impurities in melt in crystals. The Czochralski crystal growth furnace comprises a furnace body, a base, an inner thermal insulating layer, an electromagnetic induction heater, a furnace cover, a crucible, a crucible cover and a seed rod, wherein a crucible rectifying tube is fixed in the crucible; rectangular holes are uniformly formed in the lower end of the crucible rectifying tube along a circumference; the lower part of the seed rod is connected with a heat insulating ring through ribs which are uniformly and radially distributed in the radial direction; the heat insulating ring is annular; the outer diameter of the heat insulating ring is matched with the inner diameter of the inner thermal insulating layer. The Czochralski crystal growth furnace is simple and reliable in design, can effectively adjust the flow field of the cooling gas and the melt, further improve the temperature field, and improve the stability in the growth process, is beneficial to improving of the growth efficiency of high-quality crystals, reduces the cost, and is applied to the crystal preparation in various different temperature gradient growth conditions.

Description

technical field [0001] The invention belongs to a pull method single crystal growth device, in particular to a pull method crystal growth furnace, which can control the flow field in the furnace. technical background [0002] Pulling method, also known as Czochralski method, abbreviated as Cz method in English, is the most popular bulk single crystal growth technology at present. The traditional pulling method device consists of heating system (heating, temperature control and heat preservation), atmosphere control system (vacuum , gas circuit, inflation), transmission system (lifting, rotating) and other components. The advantage of this method is that it can test and observe the growth interface, directional seed crystal, "necking" technology, "finishing" technology, rotatable crucible and crystal, so it is easy to control, can obtain faster growth rate and high product performance Uniformity, so the yield is much higher than other crystal growth methods. The disadvantag...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B15/14C30B15/20
Inventor 方海生田俊王森蒋志敏张梦杰赵超杰刘胜
Owner HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com