Transistor and method for forming the transistor
A technology of transistors and semiconductors, which is applied in the manufacture of transistors, semiconductor devices, semiconductor/solid-state devices, etc., can solve the problems of transistors prone to latch-up effect, low transistor operation speed, short channel effect, etc., to avoid latch-up effect, Effect of avoiding warpage effect and improving reliability
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[0038] It can be seen from the background art that the transistors formed in the prior art have problems such as low operating speed, high power consumption, and latch-up effect.
[0039] For this reason, the formation process of transistors is studied, and it is found that the formation process of transistors includes the following steps, please refer to figure 1 , figure 1 Schematic diagram for forming a cross-section of a transistor:
[0040] providing a semiconductor substrate 100, forming a well region 102 in the semiconductor substrate 100, and forming a shallow trench isolation structure 101 in the semiconductor substrate 100 after the well region 102 is formed;
[0041] Forming a gate structure 110 on the surface of the semiconductor substrate 100, the gate structure 110 includes a gate dielectric layer 111 on the surface of the semiconductor substrate 100 and a gate conductive layer 112 on the surface of the gate dielectric layer 111;
[0042] Lightly doped regions (1...
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