Temperature self-adaptive adjustment power tube

Abstract

The temperature adaptive adjustment power tube includes a signal input terminal and a power tube grid, and is characterized in that it also includes a grid control circuit, and the grid control circuit is composed of a pull-down resistor, a drop resistor, a temperature sensing device and a first signal input tube and a second signal input tube; the first signal input tube is connected between the power supply and the pull-down resistor, the pull-down resistor is grounded, the common end of the pull-down resistor and the first signal input tube is connected to the grid of the power tube, and the signal input tube Terminal connected to the control terminal of the second signal input tube, the drop resistor and the temperature sensing device are connected in series between the drain of the second signal input tube and the ground, the second signal input tube is a PMOS, its source is connected to the power supply, and its drain is connected to The first signal is input to the control terminal of the tube, and the output voltage of the temperature sensing device has a negative temperature coefficient. The invention can realize the adjustment of the calorific value of the power tube by only using a small number of additional devices, so that the power tube can continue to work without interruption and avoid unnecessary shutdown loss.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing and relates to the design and manufacture of a power tube, in particular to a temperature self-adaptive adjustment power tube. Background technique [0002] Semiconductor power devices are single devices with high output power capability manufactured using semiconductor materials and semiconductor manufacturing processes. They are widely used in amplifiers, switching power supplies or drive circuits. Existing application circuit solutions usually require multiple power The device can be used as amplifying signal, power switch and output stage respectively. [0003] With the advancement of semiconductor technology, the minimum line width has already broken through the micron level and reached the nanometer level. Due to the continuous shrinking of the line width, the power density of semiconductor chips, especially power devices, has continued to increase. A single semiconductor chip has ...

AI Technical Summary

Problems solved by technology

[0005] In order to overcome the technical defects that the power tube in the prior art does not have a special temperature protection circuit, or the existing temperature protection circuit cannot perform limited adjustments on the chip or power tube to ensure the continuous operation of the device, the invention discloses a temperature self-adaptive adjustment power Tube

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