Silicon material heat source structure and manufacturing method thereof

A technology of silicon material and silicon structure, which is applied in the field of heat source structure of silicon material and its production, can solve the problems of insufficient concentration of heat propagation direction, non-concentration of heat radiation range, lack of directionality of heat generation, etc., to improve heat utilization rate, heat generation Uniform and good heat insulation effect

Active Publication Date: 2015-03-11
GUANGDONG MASTER GROUP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, its usual heating range is unobstructed within a few square millimeters, the heating lacks directivity, and the heat radiation range is not concentrated.
Therefore, the micro-heaters made by conventional methods have the problems of uneven heating, insufficient heat directivity, and low efficiency.
This problem also exists in the field of macroscopic heating. For example, the electric heating plate of the electric ceramic furnace is generally made of heating tape coiled on the chassis, which has many advantages, but there are still problems of low heat generation density and insufficient concentration of heat transmission direction.

Method used

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  • Silicon material heat source structure and manufacturing method thereof
  • Silicon material heat source structure and manufacturing method thereof
  • Silicon material heat source structure and manufacturing method thereof

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Embodiment 1

[0031] Such as Figure 10 The silicon material heat source structure shown is formed by bonding a cantilever beam structure heating element and a support cavity with a high thermal resistance reflective film. The cantilever beam structure heating element is made based on the SOI structure, and the order from top to bottom is The heating metal layer, silicon dioxide layer, single crystal silicon layer, insulating material buried layer (silicon dioxide layer) and substrate bulk silicon layer, its preparation method is as follows:

[0032] a. Use photolithography and lift-off process (lift-off) to make the heating element on the SOI structure: first, a layer of silicon dioxide is oxidized on the surface of the SOI structure, and the following is obtained: figure 1 The structure shown in , from top to bottom is a silicon dioxide layer, a single crystal silicon layer, an insulating material buried layer (silicon dioxide layer) and a substrate bulk silicon layer, and then the oxidiz...

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Abstract

The invention discloses a silicon material heat source structure and a manufacturing method thereof. The manufacturing method comprises the steps of firstly, fabricating a heating element by use of photoetching and lift-off processes, secondly, forming a cantilever beam structure heating element by etching a corresponding cantilever beam structure, and finally, forming a supporting cavity on which a high-thermal resistance reflecting film is attached on a silicon structure. The silicon material heat source structure is formed by bonding the cantilever beam structure heating element to the surface-treated supporting cavity on which the high-thermal resistance reflecting film is attached, and is of a micron dimension; according to the manufacturing method, a thermal island is formed by use of a suspension method, and meanwhile, a surrounding thermal reflecting cavity on which the high-thermal resistance reflecting film is attached is formed under the thermal island to guarantee the directionality of heat radiation, and consequently, a unidirectional radiation heat source can be manufactured and is high in heat conduction efficiency; the manufacturing method is applicable to the micro-electro-mechanical field and also to traditional heater manufacturing to realize higher accuracy.

Description

Technical field: [0001] The invention relates to the field of micro-electromechanical machining, in particular to a silicon material heat source structure and a manufacturing method thereof. Background technique: [0002] The current popular micro-heater adopts MEMS micro-machining technology to make micro-heating coils on the micro-structure of silicon polymer materials, and provide working temperature by electrothermal method. This technology is widely used in miniature radiant heaters and metal-semiconductor gas sensors that need to provide a certain operating temperature. However, its usual heating range is generally within a few square millimeters, the heating lacks directivity, and the heat radiation range is not concentrated. Therefore, the micro-heaters made by conventional methods have the problems of non-uniform heating, insufficient thermal directivity, and low efficiency. This problem also exists in the field of macro heating. For example, the electric heating ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81B3/00B81C1/00
Inventor 李凌瀚刘炳耀
Owner GUANGDONG MASTER GROUP
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