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Layered electrode matched with Mg-Si-Sn-based thermoelectric element and connecting technology thereof

A technology of mg-si-sn and thermoelectric elements, which is applied in the manufacture/processing of thermoelectric devices, materials for junction leads of thermoelectric devices, etc., can solve the problems of low performance of Si thermoelectric materials and difficulty in developing to the application stage, etc. Achieve the effect of simple and reliable process, good electrical property transition, and reduce interface thermal stress

Active Publication Date: 2015-02-18
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although Mg 2 There are many studies on Si-based thermoelectric devices, but n-type doped Mg 2 The performance of Si thermoelectric materials is still not high, and it is difficult to develop to the application stage

Method used

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  • Layered electrode matched with Mg-Si-Sn-based thermoelectric element and connecting technology thereof
  • Layered electrode matched with Mg-Si-Sn-based thermoelectric element and connecting technology thereof
  • Layered electrode matched with Mg-Si-Sn-based thermoelectric element and connecting technology thereof

Examples

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Effect test

Embodiment 1

[0038] A multilayer electrode matched with a Mg-Si-Sn based thermoelectric element, the electrode is divided into a three-layer structure: first Ni-Al alloy layer, second Ni-Al alloy layer and elemental Ag layer. Wherein, the mass percent content of Ni element in the first Ni-Al alloy layer is 29%, the balance is Al element, and the thickness of the first Ni-Al alloy layer is 0.5mm; The Ni element in the second Ni-Al alloy layer The mass percentage is 42%, and the balance is Al element. The thickness of the second Ni-Al alloy layer is 0.15mm; the thickness of the simple Ag layer is 0.4mm.

[0039] The connection process of the multilayer electrode of the present invention and the Mg-Si-Sn base thermoelectric element is connected by spark plasma sintering (PAS), and the specific process steps are:

[0040] 1) Take 6.0g of Mg-Si-Sn-based thermoelectric material powder prepared by solid-state reaction, put it into a graphite mold for the first PAS sintering, the vacuum degree dur...

Embodiment 2

[0048] A multilayer electrode matched with a Mg-Si-Sn based thermoelectric element, the electrode is divided into a three-layer structure: first Ni-Al alloy layer, second Ni-Al alloy layer and elemental Ag layer. Wherein, the mass percent content of Ni element in the first Ni-Al alloy layer is 29%, the balance is Al element, and the thickness of the first Ni-Al alloy layer is 0.8mm; The Ni element in the second Ni-Al alloy layer The mass percentage is 59%, the balance is Al element, the thickness of the second Ni-Al alloy layer is 0.15mm; the thickness of the simple Ag layer is 0.6mm.

[0049] The connection process of the multilayer electrode of the present invention and the Mg-Si-Sn base thermoelectric element is connected by spark plasma sintering (PAS), and the specific process steps are:

[0050] 1) Take 6.0g of Mg-Si-Sn-based thermoelectric material powder prepared by solid-state reaction, put it into a graphite mold for the first PAS sintering, the vacuum degree during ...

Embodiment 3

[0058] A multilayer electrode matched with a Mg-Si-Sn based thermoelectric element, the electrode is divided into a three-layer structure: first Ni-Al alloy layer, second Ni-Al alloy layer and elemental Ag layer. Wherein, the mass percentage content of Ni element in the first Ni-Al alloy layer is 39%, the balance is Al element, and the thickness of the first Ni-Al alloy layer is 0.8mm; The Ni element in the second Ni-Al alloy layer The mass percentage content is 42%, the balance is Al element, the thickness of the second Ni-Al alloy layer is 0.15mm; the thickness of the simple Ag layer is 0.6mm.

[0059] The connection process of the multilayer electrode of the present invention and the Mg-Si-Sn base thermoelectric element is connected by spark plasma sintering (PAS), and the specific process steps are:

[0060] 1) Take 6.0g of Mg-Si-Sn-based thermoelectric material powder prepared by solid-state reaction, put it into a graphite mold for the first PAS sintering, the vacuum deg...

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Abstract

The invention relates to a layered electrode matched with a Mg-Si-Sn-based thermoelectric element and a connecting technology of the layered electrode. The electrode is of a three-layer structure, and sequentially comprises a first Ni-Al alloy layer, a second Ni-Al alloy layer and a simple substance Ag layer. Good heat matching between the multi-layer electrode and the Mg-Si-Sn-based thermoelectric element is achieved, interface heat stress can be reduced, and the service life can be prolonged. A small wetting angle is achieved, and the electrode can be directly welded to a current guide sheet. Good electrical property transition is achieved, contact resistance is smaller than five percent of internal resistance of the Mg-Si-Sn-based thermoelectric element, and the technology for connecting the Mg-Si-Sn-based thermoelectric element and the multi-layer electrode is simple and reliable.

Description

technical field [0001] The invention relates to a layered electrode matched with a Mg-Si-Sn-based thermoelectric element and a connection process thereof, belonging to the technical field of electrode selection and preparation of thermoelectric devices. Background technique [0002] Thermoelectric material is a functional material that converts thermal energy and electrical energy. It uses its own Seebeck effect to directly convert thermal energy into electrical energy; at the same time, it uses the Peltier effect to convert electrical energy into thermal energy. Thermoelectric power generation elements made of thermoelectric materials do not require mechanical moving parts and do not undergo chemical reactions during operation. They have the advantages of long life, high reliability, and no pollution to the environment. Thermoelectric material elements are used in the aerospace field, industrial waste heat, automobile exhaust, Fields such as geothermal also have great appli...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/20H01L35/34H10N10/854H10N10/01
Inventor 鄢永高邱思源唐新峰苏贤礼
Owner WUHAN UNIV OF TECH
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