TFT (thin film transistor) substrate and manufacturing method thereof
A manufacturing method and substrate technology, applied in nonlinear optics, instruments, optics, etc., can solve the problems of light leakage, affecting the shading effect of the black matrix 101, reducing the contrast of the panel, etc., to achieve the effect of ensuring the shading effect
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[0028] see image 3 , image 3 It is a schematic structural diagram of a TFT substrate provided by an embodiment of the present invention. The TFT substrate 10 of the embodiment of the present invention includes a plurality of pixel units 110, wherein each pixel unit 110 has the same structure. The structure of one of the pixel units 110 will be described below as an example.
[0029] Please also refer to Figure 4-Figure 7 , Figure 4 yes image 3 A schematic structural diagram of one of the pixel units of the TFT substrate shown, Figure 5 yes Figure 4 The cross-sectional view of the pixel unit shown along the dotted line EF, Figure 6 yes Figure 5 A magnified view of the region A shown, Figure 7 yes Figure 5 A magnified view of region B is shown. first as Figure 4 and Figure 5 As shown, the pixel unit 110 of the embodiment of the present invention includes a substrate 11, a gate electrode 12, a first insulating layer 13, an active layer 14, a black matrix ...
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