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A kind of method of making finfet semiconductor device

A semiconductor and device technology, applied in the field of semiconductor manufacturing technology, can solve the problems that it is difficult to control the change of the height of polysilicon fins, and the manufacturing process of bulkFinFET is complicated.

Active Publication Date: 2016-12-28
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The manufacturing process of the existing bulk FinFET is relatively complicated, and the etching of the fin (such as Figure 1C ) and STI oxide formation recess (recess) (eg Figure 1F ) process, the existing bulk FinFET manufacturing process is difficult to control the change of polysilicon fin height

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  • A kind of method of making finfet semiconductor device
  • A kind of method of making finfet semiconductor device
  • A kind of method of making finfet semiconductor device

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Embodiment Construction

[0025] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0026] For a thorough understanding of the present invention, a detailed description will be set forth in the following description to illustrate the method of the present invention. Obviously, the practice of the invention is not limited to specific details familiar to those skilled in the semiconductor arts. Preferred embodiments of the present invention are described in detail below, however, the present invention may have other embodiments besides these detailed descriptions.

[0027] It should be noted that the terms used herein are for the purpose of des...

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Abstract

The invention relates to a method for manufacturing a FinFET semiconductor device. The method includes the following steps: providing a semiconductor substrate; forming a hard mask layer with a shallow groove pattern on the semiconductor substrate; etching the semiconductor substrate so as to form shallow grooves and fins between the shallow grooves; depositing a first oxide layer on the semiconductor substrate so as to fill the shallow grooves partly; depositing a groove stop layer on the first oxide layer; depositing a second oxide layer on the groove stop layer; executing a first flattening step and stopping at the groove stop layer at the tops of the fins; executing a second flattening step and stopping at the hard mask layer; and back-etching the second oxide layer in the shallow grooves so as to expose the groove stop layer in the shallow grooves. According to the method, the technology change of back-etching of the oxide layers can be well controlled.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, and in particular, the invention relates to a method for manufacturing a FinFET. Background technique [0002] Integrated circuits (ICs) have grown from a handful of interconnected devices fabricated on a single silicon chip to millions of devices. Current ICs offer performance and complexity far beyond what was originally imagined. To achieve improvements in complexity and circuit density (i.e., the number of devices that can be packed into a given chip area), the size of the smallest device feature, also known as device "geometry," has become smaller with each IC generation. Small. Semiconductor devices are now fabricated with features that span less than a quarter of a micron. [0003] With the continuous development of semiconductor technology, the improvement of integrated circuit performance is mainly achieved by continuously shrinking the size of integrated circuit devices to inc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L29/78
CPCH01L29/66795H01L29/785
Inventor 肖德元
Owner SEMICON MFG INT (SHANGHAI) CORP
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