Vacuum furnace for sapphire crystal growth

Abstract

The invention relates to a vacuum furnace for sapphire crystal growth. The vacuum furnace is designed to mainly solve the problems of high probability of thermal disturbance and high instability of temperature field of present vacuum furnaces for the sapphire crystal growth. The furnace comprises a furnace body, a water inlet valve, a flow meter, a vacuum system, a furnace cover, outlet water flow meters, electrodes, an observation hole, a crystal pulling mechanism, a lower heat shield, a lateral heat shield, an upper heat shield, a crucible, a heating body, a crucible tray, a tray top column, a water outlet pipeline and a water collecting tank; and a water collecting control tank is provided with a water inlet tube and is connected with the water collecting tank through a pipeline provided with an adjusting valve, a heat exchanger in the water collecting control tank is connected with a refrigerating machine through a pipeline provided with a refrigeration valve, a temperature control device is arranged in the water collecting control tank, and the water collecting control tank is connected with a water inlet valve at the center of the bottom of the furnace through a pipeline provided with a water pump and a control flow meter. The vacuum furnace disclosed in the invention can reduce the disturbance probability and instability of the temperature field, and ensures the stable and ideal temperature field for the sapphire crystal growth.

Description

Technical field: [0001] The invention relates to a vacuum furnace for sapphire crystal growth. Background technique: [0002] There is no water cooling at the bottom of the existing vacuum furnace for sapphire crystal growth, although some have water cooling, but there is no control of temperature and water flow, which increases the probability of thermal disturbance and instability of the temperature field of growing sapphire crystal, resulting in difficult production and poor product quality. Stability, especially the growth of crystals above 60kg is even more difficult. Invention content: [0003] The technical problem to be solved by the present invention is to provide a vacuum furnace for sapphire crystal growth that has a small probability of thermal disturbance in the temperature field, good stability, and can improve the output and quality of sapphire. [0004] The above-mentioned object is achieved like this: same as the prior art, it also includes a furnace body...

AI Technical Summary

Problems solved by technology

[0002] There is no water cooling at the bottom of the existing vacuum furnace for sapphire crystal growth. Although some have water cooling, there is no control of temperature and water flow, which increases the probability of thermal disturbance and instability of the growing sapphire crystal temperature field, resulting in difficult production and poor product quality. Stable, especially it is more difficult to grow crystals over 60kg

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