Protection method of quartz tube

Abstract

The invention discloses a quartz tube protection method. The method comprises the following steps: providing a quartz tube; carrying out primary pickling on the inner wall of the quartz tube to make the inner wall of the quartz tube have a rough surface; preparing a sacrificial layer on the rough surface of the inner wall of the quartz tube; carrying out secondary pickling on the inner wall of the quartz tube to remove the sacrificial layer; and preparing a buffer layer on the inner wall of the quartz tube. In the quartz tube protection method, the sacrificial layer can fill the rough surface of the inner wall of the quartz tube and can effectively alleviate the release of the stress of a deposited film in order to reduce or eliminate stress fringes on the inner wall of the quartz tube; and the outermost side of the inner wall of the quartz tube is provided with the buffer layer, and the buffer layer can well adsorb the deposited film and prevent the shredding of particles to reduce the particles of a low pressure chemical vapor deposition apparatus in order to improve the reliability of a low pressure chemical vapor deposition technology.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a protection method for a quartz tube. Background technique [0002] LPCVD (low pressure chemical vapor deposition), Chinese for low-pressure chemical vapor deposition, is one of the main processes in the field of large-scale integration (LSI) and very large-scale integration (VLSI) and semiconductor optoelectronic device technology. LPCVD technology can improve the quality of deposited thin films, so that the film layer has the advantages of good uniformity, low defect density, and good step coverage. It has become the main method for preparing thin films such as polycrystalline silicon, single crystal silicon, and silicon nitride. [0003] Low-pressure chemical vapor deposition equipment in the prior art is generally a quartz tube furnace, such as figure 1 As shown, the low pressure chemical vapor deposition equipment 100 includes a quartz tube 110 , a sili...

AI Technical Summary

Problems solved by technology

The presence of the stress stripes not only reduces the number of times the quartz tube 110 is used, but also increases the probability of peeling off the polysilicon film on the quartz tube 110 during the process of depositing the polysilicon film, thereby increasing the low pressure chemical vapor deposition equipment 100. High risk of particles that affect the reliability of the low pressure chemical vapor deposition process

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