Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Metal pad forming method and semiconductor structure

A technology of metal pads and semiconductors, applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as poor reliability test results, achieve easy filling, improve performance, and discreteness small effect

Active Publication Date: 2014-12-24
SEMICON MFG INT (SHANGHAI) CORP
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a method for forming a metal pad and a semiconductor structure to solve the problem of poor reliability test results in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Metal pad forming method and semiconductor structure
  • Metal pad forming method and semiconductor structure
  • Metal pad forming method and semiconductor structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] It has been mentioned in the background art that the potential difference between the two ends of the metal pads in a wafer has a certain difference. At present, it can only be considered that the electrical properties of different regions are different due to process problems. The specific reason is still unclear. After a lot of experiments, the inventor found that after adding titanium (Ti) and titanium nitride (TiN) between tantalum nitride (TaN) as an isolation layer and metal pad aluminum, the measured metal pad of the entire wafer The difference of the potential difference is greatly reduced, which in turn improves the detection pass rate.

[0034] The method for forming a metal pad and the semiconductor structure provided by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become apparent from the following description and...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a metal pad forming method and a semiconductor structure. The method comprises the step that a first isolation layer TaN, a second isolation layer Ti and a third isolation layer TiN are formed on a substrate, wherein metal interconnection lines are covered with the first isolation layer TaN, the second isolation layer Ti and the third isolation layer TiN. The potential of one end and the potential of the other end of a metal pad of a whole wafer tend to be consistent and are even very small in difference, the degrees of dispersion is low when reliability is tested, and the yield can be improved easily. Moreover, because the isolation layers are added, gap fill becomes easier when the metal pad is formed, and the performance of devices can be improved easily.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a metal pad and a semiconductor structure. Background technique [0002] The back-end process (BEOL) of integrated circuit manufacturing is mainly to form leads, which is usually done by forming metal pads. Considering that metal Cu is unstable, easy to oxidize and rust, and the requirements for resistance are not harsh, most Metallic aluminum is used to realize the fabrication of metal pads. [0003] In current metal pads, it usually has such figure 1 Structure shown: [0004] Substrate 1, the substrate 1 includes metal interconnection lines 2, a passivation layer 3 located on the substrate 1, the passivation layer 3 is formed with through holes 31, and the through holes 31 are formed with The barrier layer 4 , and the metal aluminum 5 is located on the barrier layer 4 . Considering that the metal interconnection line 2 is usually copper, in or...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/60H01L23/485
CPCH01L24/03H01L24/06H01L2224/02123H01L2224/0215H01L2224/03H01L2224/06
Inventor 郭晓清徐俊龚春雷吕乐周真
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com