Flash memory configuration method

A configuration method and flash memory technology, applied in the field of memory, can solve the problems affecting the reliability of flash memory, and achieve the effects of shortening the erasing time, shortening the time to withstand high pressure stress, and improving reliability

Inactive Publication Date: 2014-12-17
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Claims
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Problems solved by technology

However, for some sectors that require a shorter erasing time, a longer erasing time will produce an over-erased effect and affect the reliability of the flash memory

Method used

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  • Flash memory configuration method

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Embodiment Construction

[0029] As described in the background, in the prior art, the erasing operation on the flash memory is performed in units of sectors, and the erasing time of each sector is equal. In order to achieve effective erasing of all sectors, a longer erasing time should be provided to meet the erasing time requirements of all sectors. Generally, F-N tunneling technology is used for erasing flash memory. For some sectors that require a shorter erasing time, longer erasing time will easily cause the degradation of the tunnel oxide layer in the storage unit, reducing the sector’s ability to erase. In addition to the read current after the operation, the over-erase effect is generated.

[0030] An embodiment of the present invention provides a configuration method of a flash memory, the flash memory includes a data storage array and a configuration information storage array, the data storage array includes at least one sector, and the configuration method of the flash memory includes:

[...

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Abstract

The invention discloses a flash memory configuration method. A flash memory comprises a data storage array and a configuration information storage array, wherein the data storage array comprises at least one sector. The flash memory configuration method comprises the following steps: a) carrying out an erasing operation to the sector; b) verifying whether the sector is successfully erased or not; c) if the sector is successfully erased, writing a binary code corresponding to sector erasing time into the configuration information storage array; d) if the sector fails to be erased, judging whether sector erasing operation frequencies reach an upper limit or not; e) if the sector erasing operation frequencies reach the upper limit, judging that the sector fails; and f) if the sector erasing operation frequencies do not reach the upper limit, repeating the step a). The flash memory can be protected from over-erasing, sector erasing time is shortened, time for a flash memory unit to bear high-pressure stress is shortened, and the reliability of the flash memory unit is improved.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a method for configuring a flash memory. Background technique [0002] Generally, semiconductor memory used to store data is divided into volatile memory and non-volatile memory. Volatile memory is prone to data loss when the power is interrupted, while non-volatile memory can still save the memory inside in time after the power is turned off. information. Moreover, non-volatile memory has the characteristics of low cost and high density, so non-volatile memory is widely used in various fields, including embedded systems (such as PCs and peripherals, telecommunication switches, cellular phones, network interconnection devices, instrumentation, etc.), voice storage products, image storage products and data storage products, etc. Flash memory is a long-life non-volatile memory, and data deletion is performed in units of fixed sectors. [0003] figure 1 It is a schematic structur...

Claims

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Application Information

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IPC IPC(8): G11C16/14
Inventor 顾靖张永福
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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