UV detector and preparation method thereof

An ultraviolet detector and detector technology, applied in the field of ultraviolet detection, can solve the problems of insensitivity of ultraviolet detectors and difficulty in detecting weak ultraviolet light, etc., and achieve the effects of improving sensitivity, enhancing electron ionization coefficient, and reducing noise power

Inactive Publication Date: 2014-11-26
TSINGHUA UNIV
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  • Abstract
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Problems solved by technology

[0007] Aiming at the defects in the prior art, the present invention provides an ultraviolet detector and its preparation method, which solves the insensitivity of the ultraviolet detector caused by the similar ionization coefficients of electrons and holes in the ultraviolet detector in the prior art, and it is difficult to The Problem with Detecting Weak UV Light

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  • UV detector and preparation method thereof

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Embodiment Construction

[0030] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0031] figure 1 A schematic structural view of the ultraviolet detector provided by Embodiment 1 of the present invention is shown, as figure 1 Shown, the ultraviolet detector of the present embodiment comprises:

[0032] A substrate, on which an n-type layer, an i-type superlattice multiplication layer, an i-type photosensitive absorption layer...

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Abstract

The invention provides a UV detector and a preparation method thereof. The UV detector comprises a substrate. The substrate is successively provided with an n-type layer, an i-type superlattice multiplication layer, an i-type photosensitive absorption layer and a p-type layer. The n-type layer is provided with an n-type Ohmic electrode, the p-type layer is provided with a p-type Ohmic electrode, and the i-type superlattice multiplication layer is a superlattice of group-III nitrides. According to the invention, the problem of difficulty in detecting weak ultraviolet light due to UV detector insensitivity caused by similar ionization coefficients of electrons and cavities by use of a conventional UV detector in the prior art is solved.

Description

technical field [0001] The invention relates to the field of ultraviolet detection, in particular to an ultraviolet detector and a preparation method thereof. Background technique [0002] Ultraviolet detection has a wide range of applications in civilian and military fields, including chemical and biological analysis (ozone, pollutants and most organic compounds have absorption lines in the ultraviolet spectral range), flame detection (including fire alarm, missile early warning and guidance, combustion monitoring etc.), optical communication (especially communication between satellites using ultraviolet light with a wavelength less than 280nm), calibration of ultraviolet light sources (instruments, ultraviolet lithography, etc.), and astronomical research. [0003] Among them, the most commonly used ultraviolet photodetection device is a photodiode based on Si material, but it faces some inherent limitations as follows like other narrow-bandgap semiconductor detectors. Fi...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/101H01L31/18
CPCH01L31/105H01L31/1075H01L31/18H01L31/1804H01L31/1812H01L31/184H01L31/1856Y02P70/50
Inventor 汪莱郑纪元郝智彪罗毅
Owner TSINGHUA UNIV
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