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Forming method of pressure sensor

A technology of pressure sensor and electrode layer, which is applied in the direction of fluid pressure measurement, instrument, and measurement force using capacitance changes, which can solve problems such as poor performance of pressure sensors, and achieve the effects of eliminating adverse effects, improving performance, and reducing resistivity

Active Publication Date: 2016-06-29
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
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Problems solved by technology

[0005] However, the pressure sensor formed by the existing method of forming the pressure sensor has poor performance

Method used

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  • Forming method of pressure sensor
  • Forming method of pressure sensor
  • Forming method of pressure sensor

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Embodiment Construction

[0028] As mentioned in the background, existing methods form pressure sensors with poor performance. After further analysis of the reasons, it turns out that the existing method usually adopts the furnace tube process to form the top electrode layer of the pressure sensor. However, the top electrode layer formed by the furnace tube process has relatively large internal stress and high resistivity. The top electrode layer is used as the upper plate of the chamber for sensing pressure changes (the chamber is located between the bottom electrode and the top electrode), and its internal stress is required to be as low as possible so that accurate pressure changes can be obtained. At the same time, its resistance is required As low as possible, so that better conductivity characteristics can be obtained. However, if the internal stress of the top electrode layer is large, it is easy to crack itself, making the pressure sensor invalid. Even if the top electrode layer is not cracked...

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Abstract

A method for forming a pressure sensor, comprising: providing a semiconductor substrate; forming a bottom electrode layer on the semiconductor substrate; forming a sacrificial layer on the semiconductor substrate, the sacrificial layer covering the bottom electrode layer; forming a top electrode layer , the top electrode layer covers the top surface, side surfaces and part of the semiconductor substrate of the sacrificial layer; laser annealing is performed on the top electrode layer; after the laser treatment, a through hole is formed in the top electrode layer an opening in the thickness of the top electrode layer, the opening exposing the sacrificial layer; and removing the sacrificial layer through the opening. The forming method can improve the performance of the formed pressure sensor.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a pressure sensor. Background technique [0002] With the development of Micro-Electro-Mechanical-System (MEMS) technology, various sensors have been miniaturized. [0003] At present, one of the most widely used miniaturized sensors is the MEMS pressure sensor. The MEMS pressure sensor can use the sensitive film in the MEMS to receive external pressure information, and the converted signal is amplified by the processing circuit to measure the specific pressure. pressure information. MEMS pressure sensors are widely used in automotive electronics such as TPMS (tire pressure monitoring system), consumer electronics such as tire pressure gauges and sphygmomanometers, industrial electronics such as digital pressure gauges, digital flow meters, and industrial ingredient weighing. [0004] According to the different working principles of pressure senso...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01L1/14G01L9/12B81C1/00
Inventor 许忠义
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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