Gas feeding device, reaction cavity, and plasma processing equipment

Abstract

The invention provides a gas feeding device, a reaction cavity, and plasma processing equipment; wherein the gas feeding device comprises a central gas inlet, a diffusion plate unit, and a first driving source, the lower end of the central gas inlet is communicated with the inner of the reaction cavity; the diffusion plate unit and the lower end of the central gas inlet form a horizontal gas inlet, the diffusion plate unit comprises an upper diffusion plate and lower diffusion plate, the upper diffusion plate and the lower diffusion plate are laminated together and are both provided with a plurality of through holes which are used to form a vertical gas inlet that allows the process gas to go through; and the first driving source is used to solely drive the upper diffusion plate to rotate or horizontally move relative to the lower diffusion plate so as to adjust the cross section area of the vertical gas inlet. The gas feeding device can adjust the gas flow of different areas in the reaction cavity, thus the films that are deposited on each processed tools have a uniform thickness, and the technology uniformity is improved.

Description

technical field [0001] The invention relates to the technical field of microelectronic processing, in particular to an air inlet device, a reaction chamber and plasma processing equipment. Background technique [0002] Plasma Enhanced Chemical Vapor Deposition (Plasma Enhanced Chemical Vapor Deposition, hereinafter referred to as PECVD) technology is a method widely used to deposit high-quality thin films. This method is to place the substrate in a vacuum reaction chamber at intervals and Between two electrode plates parallel to each other, one of the two electrode plates is connected to the radio frequency power supply, and the other electrode plate is grounded, and the process gas is passed between the two electrode plates, and when the radio frequency power supply is turned on Afterwards, the process gas is excited to form a plasma between the two electrode plates, and the plasma reacts with the substrate to form a film required for the process on the surface of the subst...

AI Technical Summary

Problems solved by technology

It can be seen that, since the porosity of the diffuser plate 15 of the above-mentioned air intake device is fixed, it cannot be adjusted when there is a difference between the air flow in the central area of ​​the reaction chamber and the air flow in the edge area, resulting in The thickness of the film deposited on the substrate 12 located in the central area of ​​the carrier 11 is different from the thickness of the film deposited on the substrate 12 located in the edge area of ​​the carrier 11, thereby reducing the process uniformity

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