Nitride Semiconductor Device And Method Of Manufacturing The Same

Abstract

Exemplary embodiments of the present invention disclose a unidirectional heterojunction transistor including a channel layer made of a first nitride-based semiconductor having a first energy bandgap, a barrier layer made of a second nitride-based semiconductor having a second energy bandgap different from the first energy bandgap, the barrier layer including a recess, a drain electrode disposed on a first region of the barrier layer, and a recessed-drain Schottky electrode disposed in the recess of the barrier layer, the recessed-drain Schottky electrode contacting the drain electrode.

Description

technical field [0001] The present invention relates to a unidirectional heterojunction transistor, which is a nitride semiconductor device, and a method for manufacturing the same. In particular, it relates to a unidirectional heterojunction transistor capable of preventing reverse leakage current by using a rectifying electrode and a method for manufacturing the same. [0002] Alternatively, the present invention relates to a nitride semiconductor device having a mixed junction drain utilizing a Schottky junction and an Ohmic junction, and a method for manufacturing the same. Background technique [0003] Recently, with the development of information and communication technology, transistors suitable for ultra-high-speed and large-capacity signal transmission and capable of high-speed switching operations and high-voltage transistors suitable for high-voltage environments such as hybrid vehicles are required in various fields. . However, existing silicon-based transistor...

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Problems solved by technology

[0009] However, in the aforementioned conventional nitride semiconductor device, when a Schottky junction is used for the drain electrode, there is a problem that the threshold voltage exhibited by the Schottky barrier changes independently of the adjustment of the gate threshold voltage. is the threshold voltage for the forward state of the transistor

[0010] In addition, in the above-mentioned conventional nitride semiconductor device, a Schottky contact and an ohmic contact can be used in combination for the drain electrode to maintain a positive threshold voltage. In Two-dimensional Electron Gas (Two-dimensional Electron Gas) 2DEG, the reverse leakage current is generated through the drain region of the ohmic junction, so there is a limitation in preventing the reverse leakage current

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