Three-dimensional semiconductor device and manufacturing method thereof
A semiconductor and device technology, applied in the field of three-dimensional semiconductor memory devices and their manufacturing, can solve problems such as low read and write efficiency, inability to perform bulk erasing, etc., to improve device reliability, improve gate threshold voltage control characteristics, and avoid excessive Etching effect
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[0027] The features and technical effects of the technical solution of the present invention will be described in detail below with reference to the accompanying drawings and in conjunction with exemplary embodiments, and a semiconductor storage device and a manufacturing method thereof that effectively improve gate control performance and device reliability are disclosed. It should be pointed out that similar reference numerals represent similar structures, and the terms "first", "second", "upper", "lower" and the like used in this application can be used to modify various device structures or manufacturing processes . These modifications do not imply spatial, sequential or hierarchical relationships of the modified device structures or fabrication processes unless specifically stated.
[0028] Figure 1 to Figure 16 A cross-sectional view showing various steps of the method for forming a multi-gate select transistor and forming a storage transistor string thereon by adopting...
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