Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Novel ZnO-based thermoelectric thin film and preparation method thereof

A thermoelectric thin film, a new type of technology, applied in metal material coating process, vacuum evaporation coating, coating and other directions, can solve the problems of difficulty in electrical conductivity of ZnO thin film and the reduction of Seebeck coefficient, and achieve excellent thermoelectric performance and good power factor. , the effect of improving thermal stability

Inactive Publication Date: 2014-09-03
SHENZHEN UNIV
View PDF1 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the conductivity of ZnO film is generally improved by doping, its Seebeck coefficient will be reduced, and it is difficult to increase the conductivity and Seebeck coefficient of ZnO film at the same time, which limits the thermoelectric power factor of ZnO film. Further improve
However, there are very few reports on the preparation of new ZnO-based thermoelectric films by simultaneous doping of two or more metal elements, especially the introduction of Ti as the second doping element on the basis of Al-doped ZnO thermoelectric films to prepare new ZnO-based thermoelectric films. no report

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Novel ZnO-based thermoelectric thin film and preparation method thereof
  • Novel ZnO-based thermoelectric thin film and preparation method thereof
  • Novel ZnO-based thermoelectric thin film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Such as figure 1 As shown, the preparation method of the new ZnO-based thermoelectric thin film is characterized in that a certain amount of metal Al small pieces and Ti small pieces are evenly placed on the metal Zn target, and suitable Ar gas and O 2 As the sputtering gas and reaction gas respectively, the novel Zn 1-x-y Al x Ti y O thermoelectric thin film. where Zn 1-x-y Al x Ti y The x and y in the O thermoelectric thin film are controlled by the area ratio of the small metal Al block and Ti small block to the entire metal Zn sputtering channel, respectively.

Embodiment 2

[0019] figure 2 A preparation method showing a novel ZnO-based thermoelectric thin film is characterized in that first, a Ti nano-metal thin layer is deposited on a substrate material, and then a layer of Al-doped ZnO thin film is deposited, and finally the novel ZnO film is obtained by an annealing heat treatment method. 1-x-y Al x Ti y O thermoelectric thin film. where Zn 1-x-y Al x Ti y The x and y in the O thermoelectric film are controlled by the thickness of the Ti nano-metal thin layer and the Al content in the Al-doped ZnO film.

Embodiment 3

[0021] image 3 Show the novel Zn that adopts invention embodiment 2 to prepare 1-x-y Al x Ti y The conductivity of O thermoelectric film and Al-doped ZnO film as a function of temperature. The novel Zn proposed by the present invention 1-x-y Al x Ti y The conductivity of O thermoelectric thin film is higher than that of Al-doped ZnO thin film, and it decreases more slowly with the increase of test temperature. Ti co-doping provides more carriers, and the carrier mobility is also improved, so its conductivity is greater than that of Al-doped ZnO thin films.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a novel ZnO-based thermoelectric thin film and a preparation method thereof. The novel ZnO-based thermoelectric thin film is a ZnO thermoelectric thin film codoped by Al and Ti, the chemical formula of which is Zn(1-x-y)AlxTiyO (X is greater than or equal to 0.005 and less than or equal to 0.04 and y is greater than or equal to 0.005 and less than or equal to 0.04). Ti is introduced on the basis of the Al-doped ZnO thermoelectric thin film to be used as a second doping element. The conductivity of the thermoelectric thin film codoped by Al and Ti is remarkably improved. In addition, as Ti is introduced, the effective state density of the thermoelectric thin film is improved, so that the high temperature seebeck coefficient is also further improved. According to the invention solves, the problem that the conductivity and the seebeck coefficient of the thermoelectric thin film cannot be improved at the same time are solved. The novel Zn(1-x-y)AlxTiyO thermoelectric thin film both has great high temperature conductivity and seebeck coefficient, so that the thermoelectric thin film has a good power factor. The novel Zn(1-x-y)AlxTiyO thermoelectric thin film disclosed by the invention has an excellent thermoelectric performance and has a wide application prospect in the high temperature thermoelectric field.

Description

technical field [0001] The invention discloses a novel ZnO-based thermoelectric thin film and a preparation method thereof, which belong to the cross-technical field of new materials and new energy, and particularly relate to a novel ZnO-based thermoelectric thin film. 1-x-y Al x Ti y Magnetron sputtering preparation method of O thermoelectric thin film. Background technique [0002] With the rapid development of society and industrialization, the problem of energy crisis and environmental pollution is becoming more and more severe, and it is urgent to actively develop and use renewable energy and clean new energy. Thermoelectric materials are new energy materials that can directly convert heat and electricity into each other. Thermoelectric generators made of thermoelectric materials can convert exhaust heat from automobile exhaust and waste heat from thermal power plants, waste incinerators and other factory processes into electrical energy. Thermoelectric power genera...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/35C23C14/58
Inventor 罗景庭范平张东平郑壮豪梁广兴
Owner SHENZHEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products