A growth method and application of small-diameter, metallic single-walled carbon nanotubes

Abstract

The invention relates to the field of direct and controllable preparation of a metallic single-walled carbon nanotube, and in particular realtes to a growth method and application of a minor-diameter metallic single-walled carbon nanotube. A liquid nitrogen-containing organic compound is used as a carbon source and nitrogen source, hydrogen and argon are used as carrier gases, non metal silicon oxide is used as a catalyst, the single-walled carbon nanotube is grown by use of a chemical vapor phase deposition method, nitrogen acts on the catalyst in carbon nanotube nucleation and growth process, and is doped in situ into grids of the single-walled carbon nanotube, at certain temperature, single-walled carbon nanotube growth and nitrogen element doping can be simultaneously performed to obtain a minor-diameter metallic single-walled carbon nanotube network sample. The growth method realizes direct and controllable growth of the metallic single-walled carbon nanotube, the obtained minor-diameter metallic single-walled carbon nanotube network sample is free of metal contaminants, the bottleneck of direct preparing of metallic single-walled carbon nanotubes can be broken through, shortcomings of postprocessing separation methods in the prior art in obtaining of the metallic carbon nanotubes can be overcome, and the shortcomings are the problems of serious damage of the eigen structure of the carbon nanotubes and complex process.

Description

technical field [0001] The invention relates to the field of direct and controllable preparation of metallic single-walled carbon nanotubes, in particular to a growth method and application of small-diameter, metallic single-walled carbon nanotubes. Background technique [0002] Carbon nanotubes have unique and excellent electrical transport properties, and are considered to be one of the ideal materials for building next-generation nanoelectronic devices. The conductive properties of single-walled carbon nanotubes can be either metallic or semiconducting, depending on the curling of the graphene sheets that make them up. Semiconducting single-walled carbon nanotubes can be used to construct field-effect transistors and optoelectronic devices, while metallic single-walled carbon nanotubes can be used as interconnect wires between high-frequency devices or devices. The currently prepared single-walled carbon nanotubes are usually a mixture of metallic and semiconducting carb...

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Problems solved by technology

[0005] The purpose of the present invention is to provide a method for directly growing small-diameter, metallic single-walled carbon nanotubes by using nitrogen to regulate the active sites on the surface of non-metallic catalysts and its application, realizing the direct growth control of metallic single-walled carbon nanotubes , and the obtained sample does not contain metal pollutants, breaking through the bottleneck of direct preparation of metallic single-walled carbon nanotubes, and overcoming the shortcomings of the existing post-processing separation methods to obtain metallic carbon nanotubes, that is, the intrinsic structure of carbon nanotubes Serious damage, complicated process, etc.

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