Apparatus and methods for conversion of silicon tetrachloride to trichlorosilane

Abstract

The invention relates to apparatus and associated methods for conversion of silicon tetrachloride (STC) to trichlorosilane (TCS). The converter features a relatively thin annular heating zone surrounding a reaction chamber. Within the annular heating zone is a heating element that has an annular conformation about the reaction chamber. The design allows high convective heat transfer, which facilitates the use of lower heating element surface temperatures, prolonging the life of the equipment, reducing capital cost by allowing use of a smaller reactor, and greatly improving heating efficiency. A heat exchanger with a plurality of heat exchanger blocks provides further efficiency.

Description

technical field [0001] The present invention generally relates to apparatus and methods for the hydrogenation of chlorosilanes. More particularly, in certain embodiments, the present invention relates to apparatus and methods for converting silicon tetrachloride (STC) to trichlorosilane (TCS). [0002] This patent application claims the benefit of U.S. Provisional Patent Application No. 61 / 499,451 and U.S. Provisional Patent Application No. 61 / 499,461, both filed June 21, 2011, the disclosures of which are hereby incorporated by reference in It is incorporated herein by reference in its entirety. Background technique [0003] Chemical vapor deposition (CVD) reactors are used to produce polycrystalline silicon (polysilicon), the key raw material used in silicon-based solar wafers and cells. Polysilicon is also used to make semiconductor wafers for microelectronics applications. The most widely used method for producing polysilicon is the Siemens reactor process, which has ...

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However, such purpose-built systems are not widely used nor are they commercially available

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