Growth method for controlling diameter of rod-like sapphire crystal based on protective atmosphere
A sapphire crystal, protective atmosphere technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., to achieve the effect of ensuring compactness, high cost performance, and reducing manufacturing costs
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Embodiment 1
[0057] Embodiment 1: When the diameter of the sapphire crystal is 47MM, it is necessary to increase the gas flow rate to increase its diameter to 50MM, the data are shown in the table below:
[0058] Current crystal diameter (MM) Gas flow rateL / S Ventilation time (S) Gas diameter after ventilation (MM) 47 1 30 50 47 5 10 50 47 10 - The height of the liquid film decreases, h≤0, at this time the liquid film freezes
[0059] The above data show that when it is necessary to increase the diameter of the sapphire crystal, it is better to control the gas flow rate between 5-8S.
Embodiment 2
[0060] Embodiment 2: When the diameter of the sapphire crystal is 54MM, it is necessary to reduce the gas flow rate to reduce its diameter to 50MM, the data are shown in the table below
[0061] Current crystal diameter (MM) Raw gas flow rate L / S Existing gas flow rate L / S Ventilation time (MIN) Gas diameter after ventilation (MM) 54 5 2 120 50 54 5 1 60 50 54 5 0 37 50
[0062] The above data show that when the sapphire crystal diameter needs to be reduced, its aeration time is longer.
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