Semiconductor device manufacturing method and stacked chip manufacturing method

A semiconductor and device technology, applied in the field of semiconductor preparation, can solve the problems of high cost, complicated preparation process, and low production capacity, and achieve the effects of increasing production capacity, simplifying the preparation process, and reducing costs

Active Publication Date: 2016-11-23
OMNIVISION TECH (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in the prior art, the manufacturing process of stacked sensors is complicated, requiring multiple photomasks to complete the preparation of mask patterns, which is costly and low in productivity.

Method used

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  • Semiconductor device manufacturing method and stacked chip manufacturing method
  • Semiconductor device manufacturing method and stacked chip manufacturing method
  • Semiconductor device manufacturing method and stacked chip manufacturing method

Examples

Experimental program
Comparison scheme
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preparation example Construction

[0047] The core idea of ​​the present invention is to provide a method for manufacturing a semiconductor device, including the following steps:

[0048] Step S11: providing a substrate with a device function layer on one side of the substrate;

[0049] Step S12: Prepare a first opening in the device functional layer, the first opening penetrates the device functional layer, and the angle between the side wall of the first opening and the bottom wall of the first opening is less than 90 °;

[0050] Step S13: Using the device functional layer as a mask, and the first opening as a mask pattern, etching the substrate to form a second opening on the substrate.

[0051] The angle between the side wall of the first opening and the bottom wall of the first opening is less than 90°, so that the size of the top of the first opening is smaller than the size of the bottom of the first opening. In the second opening, the first opening is used as a mask pattern of the second opening, and the subst...

no. 1 example

[0058] Combine the following Figure 1-Figure 5 The semiconductor manufacturing method in this embodiment is described. among them, figure 1 Is a flowchart of the semiconductor manufacturing method of the first embodiment of the present invention; Figure 2-Figure 5 It is a schematic diagram of the structure of the semiconductor manufacturing method in the manufacturing process of the first embodiment of the present invention.

[0059] In the semiconductor manufacturing method of this embodiment, first, step S11 is performed to provide a substrate 110 with a device function layer 120 on one side of the substrate 110, such as figure 2 Shown. Among them, in figure 2 The material of the substrate 110 and the device function layer 120 are different. In other embodiments of the present invention, the material of the substrate 110 and the device function layer 120 may be the same or the same layer.

[0060] Preferably, before step S12, the method further includes forming a first barrie...

no. 2 example

[0065] See Figure 6-Figure 13 The preparation method of the stacked chip in this embodiment is described. among them, Image 6 Is a flow chart of the method for manufacturing a stacked chip according to the second embodiment of the present invention; Figure 7-Figure 13 It is a schematic diagram of the structure of the stacking chip manufacturing method in the manufacturing process of the second embodiment of the present invention. The method for preparing the stacked chip of the second embodiment uses the method of the first embodiment to prepare the second opening, and the specific steps are as follows:

[0066] First, proceed to step S21 to provide a first chip 200 and a second chip 300, such as Figure 7 As shown, the first chip 200 includes a first substrate 210 and a first epitaxial layer 220 on one side of the first substrate 210, and the first epitaxial layer 220 includes a first interconnect structure 221. The second chip 300 includes a second substrate 310 and a second...

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PUM

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Abstract

The invention provides a method for manufacturing a semiconductor device, comprising: providing a substrate with a device functional layer on one side of the substrate; preparing a first opening in the device functional layer, the first opening passing through the For the device functional layer, the angle between the side wall of the first opening and the bottom wall of the first opening is less than 90°; the device functional layer is used as a mask, and the first opening is a mask pattern. The base is etched to form a second opening on the base. The present invention also provides a method for preparing a stacked chip, which uses the above-mentioned method for preparing a semiconductor device to prepare the second opening. The semiconductor device preparation method can simplify the semiconductor preparation process, improve the production capacity of the semiconductor preparation factory (FAB), and reduce the production cost.

Description

Technical field [0001] The invention relates to the technical field of semiconductor preparation, in particular to a method for preparing a semiconductor device and a method for preparing a stacked chip. Background technique [0002] With the development of multimedia technology, digital cameras, video cameras, and mobile phones with camera functions have become more and more popular among consumers. While people are pursuing the miniaturization of digital cameras, video cameras, and mobile phones with camera functions, objects are photographed on them. The image quality of the camera puts forward higher requirements, that is, it is hoped that the image of the shooting object is clear, and the image quality of the object depends largely on the pros and cons of the components in the camera. As the core component of the camera, the quality of the sensor directly affects the quality of imaging. [0003] At present, more and more camera sensors use stacked sensors. The English name of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146H01L21/50
CPCH01L25/0657H01L2225/06565H01L2225/06544H01L2924/0002H01L21/76898H01L23/481H01L25/50H01L2924/00H01L21/76802H01L21/76831H01L2225/06541
Inventor 高喜峰叶菁
Owner OMNIVISION TECH (SHANGHAI) CO LTD
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