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Method for preparing graphene fine wires

A fine circuit and graphene technology, which can be applied to the formation of conductive patterns and other directions, can solve problems such as the preparation method of graphene-free fine circuits, and achieve the effects of low cost and simple and controllable method.

Active Publication Date: 2014-06-25
SHENZHEN SUCCESS ELECTRONICS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to provide a method for preparing graphene fine circuits, aiming to solve the problem that there is no method for preparing graphene fine circuits in the prior art

Method used

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  • Method for preparing graphene fine wires

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preparation example Construction

[0017] The embodiment of the present invention provides a method for preparing graphene fine circuit, comprising the following steps, specifically as attached figure 1 Shown:

[0018] S01. Cleaning: coating a layer of graphene film on the carrier substrate, and cleaning the surface of the graphene film;

[0019] S02. Coating: coating a layer of photoresist on the surface of the cleaned graphene film to form a photoresist layer;

[0020] S03. Exposure: Position and install a photomask parallel to the photoresist layer above the surface of the photoresist layer and designed with a sample pattern template, and perform exposure treatment on the photoresist layer with the above photomask installed, wherein, The size ratio of the sample drawing template to the physical circuit is 1:1;

[0021] S04. Developing: immerse the exposed sample in a developing solution for developing, and remove the exposed photoresist;

[0022] S05. Etching: placing the sample after the above-mentioned ...

Embodiment 1

[0048] A preparation method for producing fine lines of liquid crystal display screens from graphene, comprising the following steps:

[0049] S11. Cleaning: coating a layer of graphene film on the glass substrate, the thickness of the graphene film is 0.05nm, cleaning the surface of the graphene film, the cleaning is sequentially soaked in 0.5mol / L KOH solution 2.5 hours, rinsing with pure water, scrubbing, ultrasonic treatment with pure water, and drying, the drying temperature of the drying treatment is 110°C;

[0050] S12. Coating: coating a layer of positive photoresist on the surface of the cleaned graphene film to form a photoresist layer, the ratio of weight and number of photosensitive agent, resin, sensitizer and solvent in the photoresist is preferred It is 5:20:1:70, the volume ratio of photoresist and diluent in the coating process is 10:1, and the photoresist concentration after dilution is 5ppm;

[0051] S13. Exposure: Position and install a photomask on the su...

Embodiment 2

[0056] A preparation method for producing fine circuits of electronic chips from graphene, comprising the following steps:

[0057] S21. Cleaning: coating a layer of graphene film on the glass substrate, the thickness of the graphene film is 0.03nm, cleaning the surface of the graphene film, the cleaning is sequentially soaked in 0.6mol / L KOH solution 2 hours, rinsing with pure water, scrubbing, ultrasonic treatment with pure water, and drying, the drying temperature of the drying treatment is 120°C;

[0058]S22. Coating: coating a layer of positive photoresist on the surface of the cleaned graphene film to form a photoresist layer, the photoresist, resin, sensitizer and solvent in the photoresist The weight and number ratio is preferred 5:15:0.8:65, the volume ratio of the photoresist and diluent in the coating process is 9:1, and the diluted photoresist concentration is 8ppm;

[0059] S23. Exposure: Position and install a photomask that is completely parallel to the photore...

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Abstract

The invention is applicable to the technical field of graphene application and provides a method for preparing graphene fine wires. The method includes the steps of cleaning graphene films, coating the graphene films with photoresist, carrying out exposure treatment, and carrying out development treatment, etching treatment and film stripping treatment. The method has the advantages of being simple in process and low in cost, and the graphene fine wires prepared through the method are good in performance.

Description

technical field [0001] The invention belongs to the technical field of graphene application, in particular to a method for preparing graphene fine circuits. Background technique [0002] Graphene is a new material with a single-layer sheet structure composed of carbon atoms. It is composed of carbon atoms with sp2 hybrid orbitals to form a hexagonal planar film with a honeycomb lattice. It is a two-dimensional material with a thickness of only one carbon atom. Has excellent electrical, mechanical, optical and thermal properties. [0003] Graphene is one of the materials with the best conductivity. The movement speed of electrons in it reaches 1 / 300 of the speed of light, far exceeding the movement speed of electrons in general conductors. The resistivity is only about 10-6Ω·cm, which is higher than Copper or silver is lower, which is the material with the lowest resistivity in the world. Graphene is not only the thinnest known material, it is also very strong and rigid. G...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05K3/10
Inventor 杨顺林陈志雄朱少良
Owner SHENZHEN SUCCESS ELECTRONICS LTD
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