an image sensor

Abstract

The invention discloses an image sensor, which comprises a substrate and an optical sensor array located on the substrate, wherein the optical sensor array comprises a plurality of scanning lines, a plurality of data lines crossed in an insulation mode with the plurality of scanning lines, and optical sensors and switch units arranged in pixel regions surrounded by adjacent scanning lines and adjacent data lines; and the optical sensor array also comprises optical adjusting layers arranged on the optical sensors for adjusting photoelectric conversion efficiency of the optical sensors. According to the image sensor, the existing image sensor is improved, and adjustability of the photoelectric conversion efficiency is realized.

Description

technical field [0001] The invention relates to a device for photoelectric conversion, in particular to an image sensor. Background technique [0002] A photodiode is a component that absorbs a light signal-photon (Photon) and converts it into an electrical signal-current, usually called Photo-Diode (PD) in English. Such as figure 1 As shown, the PIN junction diode is the most commonly used type of silicon photodiode because it consists of three layers, namely p-type silicon layer (P layer) 101, intrinsic (intrinsic) silicon layer (I layer) 102 and n-type silicon layer (N layer) 103, so it is called a silicon photodiode with PIN junction. PIN junction diodes have the characteristics of fast response speed, low dark current and high sensitivity from the ultraviolet to the near infrared region. It can be used in fields such as photodetectors and optical communications. [0003] An important use of photodiodes is to form arrays for image sensing. Image sensors are currentl...

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Problems solved by technology

[0005] (1) The photoelectric efficiency of the image sensor is mainly determined by the thickness of the p-type silicon layer of the PIN junction diode. Adjusting the photoelectric efficiency can only adjust the thickness of this layer, but adjusting the thickness of the p-type silicon layer will affect the etching process of the PIN junction diode , affecting other properties such as dark current;

[0006] (2) If multiple image sensor products are mixed on the same substrate, the photoelectric conversion efficiency of each image sensor produced is the same, and it is impossible to flexibly adjust the photoelectric conversion efficiency of each image sensor according to different product requirements;

[0007] (3) Due to the high resistivity of P-doped amorphous silicon, the photoelectric signal in the peripheral area of ​​the PIN junction diode is read out very slowly, which increases the residual imaging signal

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