Ion source of injection device and ion injection method

Abstract

The invention provides an ion source of an injection device and an ion injection method. The ion source comprises an arc-starting chamber which is used for accommodating plasma, a lamp filament which is arranged on the side wall of the arc-starting chamber and is used for producing heat so as to enable the ion source gas input to the arc-starting chamber to be ionized as the plasma; a reflector electrode which is arranged on the side wall, opposite to the lamp filament, of the arc-starting chamber and is used for reflecting hot electron generated by the lamp filament; a slit which is arranged on the top of the arc-starting chamber and serves as the outlet of the plasma; a source gas inlet which is arranged on the side wall, between the reflector electrode and the lamp filament, of the arc-starting chamber, and is used for inputting the ion source gas; and a clean gas inlet which is arranged in the side wall, at the same side of the source gas inlet, of the arc-starting chamber and is used for inputting inertia clean gas. The service life of the ion source is prolonged.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an ion source of an implantation device and an ion implantation method. Background technique [0002] Ion implantation is a technique for selectively implanting impurity materials into semiconductor materials in semiconductor technology. The impurity material is ionized in the ionization chamber, and these ions are accelerated to form an ion beam with a set energy. The ion beam bombards the surface of the wafer and penetrates into the wafer to a depth related to the energy. [0003] Ion implanters typically convert a gaseous or solid impurity material into a plasma in the arc chamber, which is then drawn out of the chamber to form an ion beam that can be mass analyzed to eliminate unwanted ions species, and accelerated to the desired energy, and directed to the wafer surface. [0004] refer to figure 1 , figure 1 It is a schematic cross-sectional interface diagram o...

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Problems solved by technology

[0005] When the above-mentioned ion source generates plasma, related by-products or impurity particles will be formed in the arc starting chamber 100, and will adhere to the inner surface of the arc starting chamber 100, so that the inner surface of the arc starting chamber 100 will form a layer of conductive Thin film, even filament 103 and reflector 102 also can form one deck conductive film, and this conductive film easily makes filament 103 short-circuit, and this conductive film also easily comes off from the inner surface of arc starting chamber 100, when falling on filament or When the filament is near, the stability of the filament is made, so due to the above reasons, the service life of the ion source is greatly shortened

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