A rocking plasma confinement device

Abstract

The invention discloses a swing-type plasma restraining device which is arranged in a reaction cavity of a plasma etching device and is characterized in that the swing-type plasma restraining device includes an annular support which is arranged at between the periphery of a static chuck and the cavity wall of the reaction cavity and a plurality of swing mechanisms arranged on the annular support. Plasmas in the reaction cavity are stirred by the plurality of groups of moving swing mechanisms so that vortexes are formed to clean the reaction cavity. Each group of swing mechanism includes blades and a rotating shaft which passes through the blades along the radial direction of the annular support, wherein one end of the rotating shaft is connected with one side of the annular support, close to the static chuck, and the other end of the rotating shaft is connected with one side of the annular support, close to the cavity wall; and the blades are capable of swinging or rotating on the rotating shaft. The swing-type plasma restraining device is capable of improving the reaction probability of the plasmas and polymers deposited on parts which are hard to clean so that the cleaning capability of the polymers on the parts which are hard to clean is improved.

Description

technical field [0001] The invention relates to a cleaning device for a reaction chamber of plasma etching equipment, in particular to a swinging plasma confinement device. Background technique [0002] as attached figure 1 As shown, a plasma etching equipment in the prior art, the reaction chamber 9 is provided with a chamber wall 2 covering the inner working space, the chamber wall 2 is provided with an upper electrode assembly 3, a lower electrode assembly 4, and an upper electrode assembly 3 includes a heater 31 arranged on the top inner wall of the reaction chamber 9, a gas shower head 32, and a movable confinement ring 34 arranged around the gas shower head 32; the lower electrode assembly 4 is arranged below the upper electrode assembly 3 and includes an electrostatic chuck 41 1. A focus ring 42 and a cover ring 43 arranged around the electrostatic chuck 41 in sequence; a confinement ring 5 is set around the electrostatic chuck 41 under the cover ring 43 , and an exh...

AI Technical Summary

Problems solved by technology

Existing etching equipment and cleaning methods have the following problems: Since the cover ring 43 and the movable confining ring 34 are non-conductive structures and are located at the edge corners of the upper electrode and the lower electrode, the electric field at these positions is relatively weak, and deposits on the There are more polymers 8 in these positions, and the plasma density in these parts is relatively low during cleaning, and the chemical reaction is relatively weak, so the deposited polymer 8 is more difficult to clean off

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