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ESD protection device and method of manufacturing same

A technology of ESD protection and manufacturing method, applied in semiconductor/solid-state device manufacturing, electric solid-state device, semiconductor device and other directions, can solve problems such as poor short circuit, exposed conductive material, and insufficient combination of metal conductor powder and non-conductor powder. The effect of improving insulation reliability and reducing peak voltage

Active Publication Date: 2014-05-14
MURATA MFG CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, in the technique described in Patent Document 1, since the glass as a binder is added in a powder state, depending on the dispersion state of the glass powder, the distribution of glass components may be uneven, and as a result, the metal conductor powder May not bond well with non-conductive powders
Therefore, there is the following technical problem: especially when high-voltage ESD is generated, short-circuit defects are prone to occur
Therefore, it is difficult to completely cover the surface of the conductive material with the inorganic material, and there is a possibility that the conductive material is exposed

Method used

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  • ESD protection device and method of manufacturing same
  • ESD protection device and method of manufacturing same
  • ESD protection device and method of manufacturing same

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experiment example

[0070]

[0071] (1) Production of ceramic green sheets

[0072] As ceramic materials, materials mainly composed of Ba, Al, and Si are prepared. Then, the materials are blended until they become the prescribed components, and then calcined at 800 to 1000°C. The obtained calcined powder was pulverized by a zirconia ball mill for 12 hours to obtain ceramic powder.

[0073] Next, an organic solvent containing toluene and fuel alcohol (Japanese: エキネン) is added to the ceramic powder, and they are mixed. Then, a binder and a plasticizer are further added, and they are mixed again to obtain a slurry. material.

[0074] Next, the slurry was formed by a doctor blade method to produce a ceramic green sheet having a thickness of 50 μm. A ceramic green sheet made here is Figure 4 to Figure 8 Is shown as a ceramic green sheet 31, and another ceramic green sheet is Figure 7 and Figure 8 Here, the ceramic green sheet 36 is shown in the figure.

[0075] (2) Production of paste for discharge auxi...

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Abstract

Provided is an ESD protection device having high insulation reliability and good discharge properties. An ESD protection device comprises: first and second discharge electrodes which are positioned to face one another; a discharge assistance electrode which is formed to bridge the gap between the first and second discharge electrodes; and an insulation body substrate which retains the first and second discharge electrodes and the discharge assistance electrode. The discharge assistance electrode is configured from an aggregate of a plurality of metal particles (24) which are covered by a semiconductor film (23) which is formed from silicon carbide. To obtain the discharge assistance electrode, firing of a semiconductor composite metal powder in which semiconductor powder formed from silicon carbide is anchored in a metal particle obverse face is carried out. With the semiconductor composite metal powder, the relation between the degree of coverage (Q) (mass%) of the semiconductor powder and the specific surface area (S) (m2 / g) of the metal powder is chosen to be Q / S>=8.

Description

[0001] Technology division [0002] The present invention relates to an ESD (Electrostatic Discharge) protection device and a manufacturing method thereof, and in particular to the improvement of a discharge auxiliary electrode provided for promoting electrostatic discharge in an ESD protection device. Background technique [0003] For example, Japanese Patent Laid-Open No. 2008-85284 (Patent Document 1) discloses an overvoltage protection element that is the subject of the present invention. [0004] The overvoltage protection element described in Patent Document 1 includes non-conductor powder (for example, silicon carbide: particle size of 1 to 50 μm), metal conductor powder (for example, copper: particle size of 0.01 to 5 μm), and an adhesive (for example, , Glass powder), as an overvoltage protection element material to be used as an auxiliary discharge electrode provided to promote discharge. [0005] In addition, Patent Document 1 describes a method for manufacturing an overvol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01T1/20H01T4/10H01T4/12H01T21/00
CPCH01T1/20H01T4/10H01T4/12H01T21/00H01L2924/0002H01L2924/00H01L23/291H01L21/76886H01L23/60
Inventor 鹫见高弘足立淳筑泽孝之
Owner MURATA MFG CO LTD
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