Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

GaN-based light-emitting diode and manufacturing method thereof

A technology for light-emitting diodes and a manufacturing method, which is applied to electrical components, circuits, semiconductor devices, etc., can solve problems such as growth layer defects and affect the luminous efficiency of LEDs, and achieve the effect of ensuring crystal quality and improving luminous efficiency.

Active Publication Date: 2014-05-14
FOSHAN NATIONSTAR SEMICON
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During the growth process of the quantum well active layer, defects in the growth layer appear and affect the luminous efficiency of LEDs. Therefore, how to improve the internal quantum efficiency of blue-green LEDs has become a research hotspot.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • GaN-based light-emitting diode and manufacturing method thereof
  • GaN-based light-emitting diode and manufacturing method thereof
  • GaN-based light-emitting diode and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0072] As mentioned in the background section, the internal quantum efficiency of blue-green GaN-based LEDs in the prior art still needs to be improved.

[0073] The inventors have found that the reason for the above phenomenon is that in traditional quantum wells, such as figure 1 As shown, including the well layer 101 and the barrier layer 102 located on the surface of the well layer, during the growth process of the active layer (well layer and barrier layer), along with the In x Ga 1-x N well layer or In y Ga 1-y With the growth of the N barrier layer, the thickness of the active layer increases, the distribution of In components in the well layer or barrier layer becomes uneven, and even at the end of the growth, In "agglomeration" will be formed at the next growth interface. In severe cases, In The nanoscale "ball" (In-droplet), the crystal quality of the next layer structure (well layer or barrier layer) grown under this interface will also deteriorate, which will af...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a GaN-based light-emitting diode and a manufacturing method of the GaN-based light-emitting diode. A quantum well of the light-emitting diode comprises a well layer and a barrier layer. The well layer is an InxGa1-xN well layer, and the barrier layer is an InyGa1-yN barrier layer, wherein y<x<1, 0<x<1 and 0<=y<1. At least one GaN tunneling layer is arranged in the well layer and / or the barrier layer. Due to the fact that the GaN tunneling layer is added, before the well layer or the barrier layer grows to a certain thickness and In gathering occurs, the GaN tunneling layer is grown, and therefore the In gathering phenomenon of the well layer and / or the barrier layer is avoided. The crystalline quality of the quantum well is improved, and therefore the light-emitting efficiency of the light-emitting diode is improved.

Description

technical field [0001] The invention relates to the technical field of manufacturing semiconductor devices, in particular to a GaN-based light-emitting diode and a manufacturing method thereof. Background technique [0002] Light-Emitting Diode (LED for short) has the advantages of high brightness, low energy consumption, long life, and fast response speed. There are a wide range of applications. With the development of light-emitting diodes, GaN-based light-emitting diodes have become mainstream products in the market. [0003] Moreover, the current market demand for blue-green LEDs is increasing, and the performance requirements for blue-green LEDs are also getting higher and higher. At present, the quantum well active layer of blue-green LED is generally In x Ga 1-x N / In y Ga 1-y N, where In x Ga 1-x In composition x in N well layer is greater than In y Ga 1-y In composition y in the N barrier layer. During the growth process of the quantum well active layer, d...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/06H01L33/32H01L33/00
CPCH01L33/0075H01L33/06H01L33/145H01L33/32
Inventor 张冀李鹏
Owner FOSHAN NATIONSTAR SEMICON
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com