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Melting process for polycrystalline silicon cast ingots

A technology of polysilicon and melting material, which is applied in the direction of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the problems of insufficient melting time, too long melting time, and the decline in the quality of polysilicon ingots, etc., to achieve convenient, The effect of reducing the sticking rate and improving the quality of crystal growth

Inactive Publication Date: 2014-04-23
XIAN HUAJING ELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a melting process for polysilicon ingot in view of the deficiencies in the above-mentioned prior art. The quality of the polysilicon ingot produced is reduced due to insufficient material time or too long melting time

Method used

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  • Melting process for polycrystalline silicon cast ingots
  • Melting process for polycrystalline silicon cast ingots

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Such as figure 1 The shown melt process for polycrystalline silicon ingots includes the following steps:

[0037] Step 1. Preheating: Preheat the silicon material contained in the crucible with an ingot furnace, and gradually increase the heating temperature of the ingot furnace to T1; the preheating time is 7h, where T1=1175°C.

[0038] In this embodiment, the ingot furnace is a G5 ingot furnace. Moreover, the ingot furnace is specifically a G5 ingot furnace produced by Zhejiang Jingsheng Electromechanical Co., Ltd. The crucible is a quartz crucible and it is a G5 crucible, and the produced polysilicon ingot is a G5 ingot.

[0039] In actual use, the charging amount of the quartz crucible is about 600 kg.

[0040] In this embodiment, the charging amount of the quartz crucible is 560 kg. During actual use, the charging amount of the quartz crucible can be adjusted accordingly according to specific needs.

[0041] In this embodiment, during the preheating process in step 1, the...

Embodiment 2

[0074] In this embodiment, the difference from embodiment 1 is: the preheating time in step 1 is 6h and T1=1185°C, P1=80kW; in step 2, T5=1560°C, t=18min, Q1=650mbar; step 1. The medium holding time is 0.4h; from step 2 to step 5, T2=1210℃, and the heating time is 0.4h; in step 6 T3=1460℃ and the heating time is 3.5h; in step 7, T4=1510℃ and The heating time is 3.5h; in the 8th step, T5=1560℃ and the heating time is 3.5h; the 9th step is 3.5h; the 10th step is 4h.

[0075] In this embodiment, the process of heating and pressurizing in steps 2 to 5 is as follows:

[0076] The second step, the first step is to increase: the heating temperature of the ingot furnace is increased from 1185°C to 1190°C, and the heating time is 5 min.

[0077] Step 3 and Step 2: Increase the heating temperature of the ingot furnace from 1190°C to 1195°C, and the heating time is 5 minutes.

[0078] Step 4 and Step 3: Raise the heating temperature of the ingot furnace from 1195°C to 1205°C, and the heating ti...

Embodiment 3

[0083] In this embodiment, the difference from embodiment 1 is: the preheating time in step one is 10h and T1=1165°C, P1=70kW; in step two, T5=1540°C, t=22min, Q1=550mbar; step 1. The medium holding time is 0.6h; from step 2 to step 5, T2=1190℃ and the heating time is 0.6h; in step 6 T3=1440℃ and the heating time is 4.5h; in step 7 T4=1490℃ and The heating time is 4.5h; in the 8th step, T5=1540℃ and the heating time is 4.5h; the 9th step is 4.5h; the 10th step is 8h.

[0084] In this embodiment, the process of heating and pressurizing in steps 2 to 5 is as follows:

[0085] The second step, the first step is to increase: increase the heating temperature of the ingot furnace from 1165°C to 1172°C, and the heating time is 9 minutes.

[0086] Step 3 and Step 2: Increase the heating temperature of the ingot furnace from 1172°C to 1178°C, and the heating time is 8 minutes.

[0087] Step 4 and Step 3: Increase the heating temperature of the ingot furnace from 1178°C to 1183°C, and the heat...

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Abstract

The invention discloses a melting process for polycrystalline silicon cast ingots. The process comprises the following steps: 1, preheating: an ingot furnace is adopted to preheat a silicon material filled in a crucible, and the heating temperature of the ingot furnace is gradually increased to T1; the preheating time is 6-10h, and T1=1165-1185 DEG C; 2 melting: the silicon material filled in the crucible is melted, the melting temperature is T1-T5, and T5=1540-1560 DEG C; after the silicon material in the crucible is completely melted, the heating temperature of the ingot furnace is controlled to T5, and then the heating power of the ingot furnace begins to decline; after the heating power of the ingot furnace stops declining and lasts for the time t, the melting process is complete; t=18-22min. The process has the advantages of simple steps, reasonable design, convenience in realization, easiness in grasp and good using effect and can effectively solve the problem that the quality of the produced polycrystalline silicon cast ingots is reduced as the melting time is deficient or too long.

Description

Technical field [0001] The invention belongs to the technical field of polycrystalline silicon ingots, and in particular relates to a melt process for polycrystalline silicon ingots. Background technique [0002] Photovoltaic power generation is one of the most important clean energy sources and has great development potential. The key factors restricting the development of the photovoltaic industry are the low photoelectric conversion efficiency on the one hand, and the high cost on the other. Photovoltaic silicon wafers are the basic material for the production of solar cells and modules. The purity of polysilicon used to produce photovoltaic silicon wafers must be above 6N (that is, the total content of non-silicon impurities is below 1ppm), otherwise the performance of photovoltaic cells will be greatly negatively affected. influences. In recent years, polycrystalline silicon wafer production technology has made significant progress. Polycrystalline ingot casting technology...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/06C30B29/06
Inventor 周建华
Owner XIAN HUAJING ELECTRONICS TECH
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