Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Crystal growth device

A long crystal and hemispherical technology, applied in the field of iron and steel metallurgy, can solve the problems of inability to meet the basic requirements of the beneficiation process, low selectivity, and hindered migration

Active Publication Date: 2015-09-30
PANGANG GRP MINING
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at present, the black titanite grains in the electric furnace slag are mixed with other minerals, and the volume is small, which cannot meet the basic requirements of the beneficiation process, and the selectivity is very low.
On the other hand, because the cooling rate is too fast, the elements in the molten slag have not yet had time to migrate to the liquid-solid phase transition interface, the slag body has solidified, and the migration is hindered, so that some useful elements can only form with the elements that need to be discarded. Homogeneous glassy phase, and this part of the beneficial element cannot be separated from the discarded element only by physical means

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Crystal growth device
  • Crystal growth device
  • Crystal growth device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] The present invention will be further described below in conjunction with the embodiments. However, the following embodiments are only used for illustrative purposes and cannot be used to limit the present invention. The same symbols in the various drawings always represent the same elements.

[0033] According to the three transfer principles of heat energy: heat conduction, heat radiation and heat convection, the present invention designs a spherical heat preservation crystal growth device, which comprehensively slows down the cooling speed of the molten slag after it is released from the furnace, and can make the crystal grains in the molten slag grow longer. As large as the particle size meets the requirements of mineral processing, it also lays a theoretical foundation for the subsequent establishment of a mathematical model for the cooling of slag balls and the crystal growth process.

[0034] The present invention will be discussed in detail below by taking the re...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a crystal growth device. The crystal growth device comprises a main body and a support vehicle, wherein the main body comprises two hemispherical spherical surface shells, the upper and the lower hemispherical spherical surface shells are buckled to form a sphere, a space is formed in the sphere to accommodate molten slag, a fastener is arranged at the buckling part of the sphere, a slag port and a slag cover are arranged at the top of the hemispherical spherical surface shell positioned at the upper part, the hemispherical spherical surface shell positioned at the lower part is connected with the support vehicle, and the main body can move along with the movement of the support vehicle. The crystal growth device according to the invention can realize the effects of heat preservation and slow cooling in a comprehensive manner from three aspects of preventing heat conduction, heat radiation and heat convection, and can enable crystals of an anosovite phase in the molten slag to grow until grain sizes meet the process requirements of follow-up ore dressing.

Description

technical field [0001] The invention belongs to the field of iron and steel metallurgy, and in particular relates to a crystal growth device for recovering useful elements from smelting slag in an electric furnace for direct reduction of vanadium-titanium-iron concentrate. Background technique [0002] The Panxi area has abundant titanium ore resources, accounting for more than 90% of the country's reserves, providing unique natural conditions for the development of the titanium slag industry. Converter direct reduction-electric furnace deep reduction is a newly developed process for recovering titanium resources in iron ore concentrates, and TiO in the slag produced 2 The content of the molten slag is more than 40%, and the molten slag is directly supplied to titanium dioxide smelting after forced cooling by water spraying. [0003] In the above molten slag, TiO 2 The enriched phase of the slag is black titanite, if the black titanite can be selected by ore dressing metho...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C22B34/12C22B7/04
CPCY02W30/54Y02P10/20
Inventor 肖良初汪传松王勇王洪彬
Owner PANGANG GRP MINING
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products