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Al-doped ZnO texture thermoelectric material manufacturing method

A thermoelectric material and texture technology, applied in the fields of nanotechnology, nanotechnology, nanotechnology, etc. for materials and surface science, which can solve the problems of large grain size, reduced thermal conductivity, and unreported thermoelectric materials.

Inactive Publication Date: 2014-04-09
UNIV OF SCI & TECH BEIJING
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  • Claims
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Problems solved by technology

However, the grain size of the above-mentioned textured bulk materials is relatively large, generally 1-20 μm, which is not conducive to the reduction of thermal conductivity.
At present, the preparation of Zn with both nanometer and textured structure characteristics 1-x Al x O bulk thermoelectric materials have not been reported

Method used

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  • Al-doped ZnO texture thermoelectric material manufacturing method

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Embodiment Construction

[0009] First, the Al-doped ZnO nanocomposite spherical precursor powder was prepared by hydrothermal method, and zinc acetate (Zn(CH 3 COO) 2 ·2H 2 O) (mass fraction greater than 99%) and aluminum nitrate (Al(NO 3 ) 3 ·9H 2 O) (mass fraction greater than 99%) as the raw material, according to the general chemical formula Zn 1-x Al x O(0.001≤x≤0.5mol) configuration, triethanolamine ((HOCH 2 CH 2 ) 3 N) As a surfactant, deionized water is used as a solvent to prepare Al-doped ZnO nanocomposite spherical precursor powder in a hydrothermal kettle. The nanocomposite spherical structure is characterized by the self-assembly of 10-800nm ​​nanoparticles The diameter of the nano-composite sphere is 1-10 μm, and the (00l) axis of the nano-particles are arranged radially along the diameter direction of the micro-sphere. The nano-micro composite spherical precursor powder is subjected to spark plasma sintering to obtain an Al-doped ZnO bulk material with a grain size of 100-900 nm and a text...

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Abstract

The invention discloses an Al-doped ZnO texture thermoelectric material manufacturing method and belongs to the technical field of energy materials. The Al-doped ZnO texture thermoelectric material manufacturing method is characterized in that zinc acetate and aluminum nitrate are used as raw materials and configured according to the chemical general formula of Zn1-xAlxO (0.01<=x<=0.5mol), triethanolamine serves as a surfactant, deionized water serves as a solution, the pH value is 7.0-9.0, a hydrothermal reaction is performed for 6-80 hours under the temperature of 120 DEG C to 240 DEG C, a nano-micro composite spherical powder body having the diameter of 1-10 microns and formed through self-assembling of nano-particles of 10-800nm is prepared, heat-preservation sintering is performed for 1-30min under the pressure of 30-200MP and the temperature of 850-1400 DEG C through the spark plasma sintering technology, a Al-doped ZnO block material with the texture degree of 15%-60% is prepared, and the grain size is 100-900nm. The Al-doped ZnO texture thermoelectric material manufacturing method can fast and easily prepare the Al-doped ZnO block material which has the nanometer and texture structure features at the same time, the carrier mobility is improved, meanwhile, the heat conductivity is reduced, and the thermoelectric performance is improved.

Description

Technical field [0001] The invention belongs to the technical field of energy materials, and particularly relates to a method for preparing Al-doped ZnO textured thermoelectric materials, and relates to a hydrothermal synthesis method and a spark plasma sintering process. Background technique [0002] With the rapid development of industrialization, energy and environmental issues have become one of the important issues of human society. Thermoelectric material is a kind of functional material that directly realizes the mutual conversion of heat energy and electric energy. Thermoelectric devices made of thermoelectric materials can output electrical energy through the Seebeck effect in the presence of a temperature gradient, and are called thermoelectric batteries. On the other hand, thermoelectric devices can also generate temperature differences through the Peltier effect to achieve electronic cooling. Thermoelectric conversion has the characteristics of small device size, hig...

Claims

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Application Information

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IPC IPC(8): B22F3/105B22F9/24B82Y30/00B82Y40/00
Inventor 张波萍张代兵张雨桥朱立峰
Owner UNIV OF SCI & TECH BEIJING
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