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Texturing method for single crystal semiconductor substrates for reduced reflection of incident light

A semiconductor and incident light technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, crystal growth, etc., can solve problems such as oxygen content reduction

Inactive Publication Date: 2016-07-06
SUN CHEM CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

To address this problem, a nitrogen purge is often used to reduce the oxygen content in the strong base bath; however, this purge does not reduce the oxygen content to low enough levels and planar regions are still typically observed

Method used

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  • Texturing method for single crystal semiconductor substrates for reduced reflection of incident light
  • Texturing method for single crystal semiconductor substrates for reduced reflection of incident light
  • Texturing method for single crystal semiconductor substrates for reduced reflection of incident light

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] Three doped monocrystalline silicon wafers (from SolarGiga) had n+ doped regions on the front or emitter layer and pn junctions below the emitter layer. The above wafers were immersed in 18 liters of the high bath ratio texturing solution in a falconline. The formulation of the texture solution is shown in Table 1.

[0060] Table 1

[0061] components

content

Tripropylene glycol 1

0.5wt%

Potassium hydroxide

6wt%

[0062] 1,4-Butanediol 2

0.5wt%

7 --> water

93wt%

[0063] 1 Weight average molecular weight=192g / mol; 2 Flash point = 121°C

[0064] Flash point=140.5℃

[0065] Boiling point=268℃

[0066] Each wafer was weighed prior to texturing. The aqueous texturing solution was 80°C. No nitrogen sparging. The solution was manually stirred. The pH of the texturing solution was 13. During the texturing process, the dissolved oxygen content was measured using a D0202G2-WireDissolvedOxygen...

Embodiment 2

[0073] The method described in Example 1 was repeated using another three doped silicon single crystal semiconductor wafers. In addition to the components in Table 1, the formulation of the texturing solution included N-isopropylhydroxylamine. The formulation of the texture aqueous solution is shown in Table 3.

[0074] table 3

[0075] components

content

Tripropylene glycol

0.5wt%

Potassium hydroxide

6wt%

1,4-Butanediol

0.5wt%

N-isopropylhydroxylamine 3

0.017wt%

8 --> water

92.983wt%

[0076] 3 Hydroguard TM1-15 (Available from The Dow Chemical Company, Midland, MI, USA)

[0077] Each wafer was weighed before and after texturing. The aqueous texturing solution was 80°C. No nitrogen sparging. The solution was manually stirred. The pH of the texturing solution was 13. The results are shown in Table 4.

[0078] Table 4

[0079]

[0080] Addition of N-isopropylhydroxylamine reduces the oxy...

Embodiment 3

[0082] One of the two texturing solutions shown in Table 5 textured two doped monocrystalline silicon semiconductor wafers respectively.

[0083] table 5

[0084] components

Solution 1

Solution 2

Tripropylene glycol

1.2% bv

1.2% bv

Potassium hydroxide

6wt% (2ag / L)

6wt% (25g / L)

1,4-Butanediol

0.3% bv

0.3% bv

N-isopropylhydroxylamine

０

0.017wt%

water

margin

margin

[0085] Each wafer was immersed in one of the above two texturing solutions for 10 minutes. The solution was kept at 80°C and the pH of the solution was 13. Without nitrogen sparging, the solution was manually stirred. The oxygen content at the beginning of the texture in each bath was measured using a D0202G2-WireDissolvedOxygenAnalyzer. Solution 1 containing no N-isopropylhydroxylamine had an oxygen content of 3.3 ppm. In contrast, solution 2 containing N-isopropylhydroxylamine had an oxygen content of 0 ppm.

[0...

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Abstract

Texturing methods for single crystal semiconductor substrates for reduced reflection of incident light. Texture a single crystal semiconductor substrate in an alkaline bath to form a tapered structure on its surface to reduce the reflection of incident light and improve the light absorption of the wafer. The alkaline bath includes compounds that prevent the formation of planar regions between the pyramidal structures to enhance light absorption. A method is provided, the method comprising: a) providing a single crystal semiconductor substrate; b) providing a solution comprising one or more kinds of alkoxy glycols, one or more basic compounds and one or more oxygen scavengers in an amount sufficient to reduce the oxygen concentration in solution to 1000 ppb or less; and c) converting the single crystal semiconductor The substrate contacts the solution to anisotropically texture the single crystal semiconductor substrate.

Description

field of invention [0001] The invention relates to a texturing method of a single crystal semiconductor substrate which reduces the reflection of incident light. More specifically, the present invention relates to a texturing method of a single crystal semiconductor substrate in an alkaline bath, which reduces the reflection of incident light by reducing the plane area between pyramid structures. Background technique [0002] The textured semiconductor surface reduces the reflection of broadband incident light, thus increasing the intensity of absorbed light. These semiconductors can be used in the manufacture of solar cells. A solar cell is a device that converts incident light energy, such as sunlight, on its surface into electrical energy. Reducing the reflection of incident light on the surface can improve the power conversion efficiency. However, texturing is not limited to semiconductors for solar cells, but can also be used in photovoltaic devices, optical and elec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0236C30B33/10
CPCC30B33/10H01L31/02366H01L31/02168H01L31/02363Y02E10/50H01L21/306H01L31/042
Inventor R·K·巴尔C·奥康纳P·W·辛克利G·R·阿拉戴斯
Owner SUN CHEM CORP
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