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Nonvolatile memory device and method for controlling the same

A non-volatile storage and device technology, applied in static memory, read-only memory, information storage, etc., can solve problems such as reducing data accuracy and changing programming processing speed

Active Publication Date: 2014-01-01
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the pre-stored margin value level is changed, it is possible to reduce the accuracy of the data
[0013] In addition, when performing a program operation, even in one chip, the program processing speed in a module may vary for each page
In another chip, this programming processing speed may vary based on the manufacturing process and characteristics of the device

Method used

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  • Nonvolatile memory device and method for controlling the same
  • Nonvolatile memory device and method for controlling the same
  • Nonvolatile memory device and method for controlling the same

Examples

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Embodiment Construction

[0041] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0042] figure 1 A schematic diagram showing a nonvolatile memory device according to an embodiment of the present invention.

[0043] refer to figure 1, the non-volatile memory device includes: main cell array 100, backup cell array 110, row decoder 120, page buffer 130, data control unit 140, input / output (I / O) pad 150, incremental step A pulse programming (incremental step pulse program, ISPP) control unit 160 , and an ISPP driving unit 170 .

[0044] The ISPP control unit 160 includes: a counting unit 161 , a reference register unit 162 , a programming bit register unit 163 , and an ISPP horizontal operation unit 164 .

[0045] The main cell array 100 includes a plurality of memory modules connected to bit lines and word lines. Each memory module includes a plurality of cell strings.

[0046] The backup cell array 110 located in ...

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Abstract

A nonvolatile memory device and a method for controlling the same are provided relating to a flash memory device. The nonvolatile memory device includes a page buffer configured to store program bits, an incremental step pulse program (ISPP) control unit configured to count the program bits stored in the page buffer and control ISPP levels differently depending on change of the program bits, and an ISPP driving unit configured to drive an ISPP voltage in response to an output signal of the ISPP control unit.

Description

technical field [0001] The present invention relates generally to non-volatile memory devices and methods for controlling the same, and more particularly, the present invention relates to methods for controlling Incremental Step Pulse Programming (ISPP) in flash memory devices The technique of operation. Background technique [0002] A semiconductor memory device is a memory device configured to store data and read the stored data when necessary. Generally, semiconductor memory devices may include volatile memory devices and nonvolatile memory devices. [0003] Volatile memory devices lose stored data when power is not supplied. In such a volatile memory device, data reading and writing are fast, but when the volatile memory device is not powered, the stored data is erased. [0004] Nonvolatile memory devices retain stored data even when power is not applied. Therefore, a nonvolatile memory device retains data regardless of whether it is supplied with power. [0005] Ex...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/10
CPCG11C16/10G11C16/0483G11C16/3404G11C16/3454G11C16/06G11C16/34
Inventor 姜熙福
Owner SK HYNIX INC
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