Self-assembly magnetic memorizer and forming method thereof

Abstract

The invention provides a self-assembly magnetic memorizer which comprises a memorizer body. The memorizer body comprises a disc-shaped hard disk substrate, a plurality of annular rail grooves are formed in the hard disk substrate by taking the circle center of the hard disk substrate as the center, a silicon dioxide nanosphere array is arranged in the rail grooves, the surfaces, in contact with the air, of silicon dioxide nanospheres are provided with iron platinum thin films, and an iron platinum dot matrix is formed. A forming method of the self-assembly magnetic memorizer comprises the steps that the annular rail grooves are etched in the hard disk substrate with the photoetching technique; the silicon dioxide nanosphere array is prepared in the rail grooves in a nanometer self-assembly micromachining way; the iron platinum thin films are grown on the silicon dioxide nanospheres, and the regular iron platinum dot matrix is formed. The self-assembly magnetic memorizer lowers the coupling effect of magnetic domains to the maximum degree, meets the requirement for high magnetic recording density, and has environmental stability at the same time. The forming method of the self-assembly magnetic memorizer overcomes physical defects of traditional continuous magnetic storage media.

Description

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AI Technical Summary

Benefits of technology

This patented technology improves upon existing technologies by combining two benefits - perpendular writing and dispersed media storing (dispersing). Additionally, this new type of memory uses special materials called FePt or platinum instead of pure metals like copper. These technical improvements help reduce interference from external factors affecting data stored there due to their ability to align them correctly during processing.

Problems solved by technology

Technological Problem addressed in this patented technical solution describes how data processing devices such as hard drives have limitations in storing more bits or improving their performance. These issues include increased noise caused during writing operations, difficulty in achieving stable orientation states over time, and limited space available within memory chips themselves. Magnetism refers to the phenomenon described above but it also affects the alignment state of nearby magnesis fields. To address these challengings, researchers explored various techniques like perpendaric acid exchange method, nanometer microsmilling methods, and atomic layer deposition technologies.

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