Direct current side circuit of IGCT (integrated gate commutated thyristor) converter/test circuit and method for designing parameters of clamp capacitor and clamp resistor of direct current side circuit

Abstract

The invention discloses a direct current side circuit of an IGCT (integrated gate commutated thyristor) converter / test circuit and a method for designing parameters of a clamp capacitor and a clamp resistor of the direct current side circuit. The direct current side circuit comprises a DC capacitor, a buffer inductor, a clamp diode, the clamp capacitor and the clamp resistor, wherein a positive electrode of the DC capacitor is connected with one end of the buffer inductor and one end of the clamp resistor, the other end of the buffer inductor is connected with a positive electrode of the clamp diode, the other end of the clamp resistor is connected with a negative electrode of the clamp diode, the negative electrode of the clamp diode is connected with one end of the clamp capacitor, and the other end of the clamp capacitor is connected with a negative electrode of the DC capacitor. The direct current side circuit disclosed by the invention is based on circuit principles, analyzes various states in the overall buffering and the working process of a clamp circuit in detail, derives the method for designing the parameters of the clamp capacitor and the clamp resistor according to differential expressions of various working states, thereby being more complete in theory, wider in application range and more accurate in parameter.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to a parameter design method for a DC side circuit of an IGCT (integrated gate commutated thyristor) converter / test circuit and its clamping capacitance and clamping resistance. Background technique [0002] As a new type of power semiconductor device, IGCT has the advantages of high blocking voltage, large on-state current, low loss and high reliability, and has a good application prospect. However, the IGCT device also has certain shortcomings: the allowable current conversion rate di / dt of the IGCT itself is not very high. Therefore, in practical applications, a series snubber inductor is needed to limit the current conversion rate di / dt flowing through the device during turn-on and short-circuit. dt. Since there are stray inductances in the line, when the IGCT is turned off, the combined effect of the snubber inductance and the stray inductance will make the IGCT bear...

AI Technical Summary

Problems solved by technology

However, the IGCT device also has certain shortcomings: the allowable current conversion rate di / dt of the IGCT itself is not very high. Therefore, in practical applications, a series snubber inductor is needed to limit the current conversion rate di / dt flowing through the device during turn-on and short-circuit. dt

[0003] In industrial applications, the design of the clamping circuit of the IGCT is basically based on the empirical formula provided by ABB. However, the empirical formula does not have a complete theoretical derivation. At the same time, the calculation results of the empirical formula are often not optimal. performance

In recent years, some literatures have also deduced the relationship between device parameters and clamping voltage, but the author did not give the ultimate applicable clamping circuit design criteria, and other literatures only analyzed some key devices or parameters in the entire circuit (antiparallel Diode, stray inductance) on the turn-on and turn-off of IGCT devices, and no snubber and clamp circuit design method is proposed

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