Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Novel double-layer-film back-passivated solar cell structure

A solar cell and rear passivation technology, which is applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of limiting the popularization of selective emitter batteries, and achieve the effects of improving passivation effect, spectral response, and absorption

Inactive Publication Date: 2013-11-20
ZHEJIANG JINKO SOLAR CO LTD +1
View PDF7 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, these two technical difficulties limit the popularization of selective emitter cells

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Novel double-layer-film back-passivated solar cell structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0011] Such as figure 1 As shown, a new double-layer film back passivation solar cell structure, including silver electrode 1, silicon nitride dielectric film 5, aluminum back field 7, P-type silicon substrate 2, deposited on the silicon nitride dielectric film 5 Aluminum oxide passivation film 3 and silicon oxynitride passivation film 4, and grooves 6 are evenly distributed on the back field of silicon nitride dielectric film 5, aluminum oxide passivation film 3 and silicon oxynitride passivation film 4. The thickness of the aluminum oxide passivation film 3 is in the range of 10-20 nm, and the thickness of the silicon oxynitride passivation film is in the range of 15-25 nm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a novel double-layer-film back-passivated solar cell structure. The structure comprises silver electrodes, silicon-nitride dielectric films, an aluminum back field and a silicon substrate, wherein a layer of alumina passivation film and a layer of silicon oxynitride passivation film are further arranged on each silicon-nitride dielectric film, and a plurality of grooves are formed in back fields of the silicon-nitride dielectric films, the alumina passivation films and the silicon oxynitride passivation films and are distributed uniformly. The novel double-layer-film back-passivated solar cell structure has the advantage that the photoelectric conversion efficiency of a solar cell is further increased.

Description

technical field [0001] The invention relates to a solar cell structure, in particular to a double-layer passivation film solar cell structure comprising an atomic layer deposition aluminum oxide passivation film and a PECVD deposition silicon oxynitride passivation film. Background technique [0002] At present, in the structure of traditional solar cells, the short-wave response of the solar spectrum and the series resistance are always a pair of contradictions, which restricts the photoelectric conversion efficiency of the cell. In order to solve the contradiction between the two, in recent years, people have devoted themselves to the development of high-efficiency batteries with new battery structures, such as the PESC and PERL structure new batteries developed by the laboratory of the University of New South Wales, which make the conversion efficiency of the battery reach 24.5%. The current industrialized selective emitter cell (SE solar cell) is a further improvement on...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216
Inventor 苗凤秀福克斯·斯蒂芬蔡永梅汤安民苗丽燕刘丽芳刘长明杨金波谢斌谢旭李仙德陈康平金浩
Owner ZHEJIANG JINKO SOLAR CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products