Close-arranged LED area array device with high luminous uniformity and preparation method
A technology for uniform luminescence and devices, applied in the direction of electric solid devices, semiconductor devices, electrical components, etc., can solve problems such as limiting the scope of application, and achieve the effects of uniform current distribution, high luminous efficiency, and simple and easy manufacturing process
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specific Embodiment approach 1
[0028] Specific implementation mode 1. Combination Figure 1 to Figure 8 In this embodiment, the densely arranged LED area array device with high luminous uniformity includes: a light-transmitting layer 1, a light-emitting layer 2, a reflective layer 3, a substrate 4, an upper electrode 5, an upper electrode lead 9, a lower electrode 6, a lower Electrode lead 10 , flexible area 7 and microlens 8 . The upper surface of the reflective layer 3 is the light-emitting layer 2 , the light-transmissive layer 1 , the upper electrode 5 and the microlens 8 , and the lower surface of the reflective layer 3 is the substrate 4 . The light-transmitting layer 1, the light-emitting layer 2, the reflective layer 3 and the substrate 4 form an LED light-emitting unit. The LED light-emitting units are uniformly arranged to form a light-emitting unit array. There is a flexible area 7 between the light emitting units, and the flexible area 7 connects each light emitting unit sequentially and makes...
specific Embodiment approach 2
[0031] Specific embodiment two, combine Figure 9 and Figure 10 This implementation mode is described. This implementation mode is the preparation method of the high-luminescence uniformity LED area array device described in the first specific implementation mode. The bottom-up production method is adopted, that is, the back structure is fabricated first, and then the protection For the back structure, prepare the front structure. The specific process is:
[0032] A. The back of the light-emitting chip is thinned, that is, the lower surface of the light-emitting chip is thinned:
[0033]a) The matrix material used in this embodiment is a light-emitting chip, and the light-emitting chip used is composed of a light-transmitting layer, a light-emitting layer, a reflective layer and a substrate, such as Figure 9 as shown in a.
[0034] b) Cleaning the light-emitting chip. Then prepare a layer of protective film on the upper surface of the light-emitting chip, that is, the u...
specific Embodiment approach 3
[0058] Specific implementation mode 3. This implementation mode is an example of the preparation method of a densely-arranged LED area array device with high luminous uniformity described in specific implementation mode 2:
[0059] 1. Thinning the lower surface of the light-emitting chip:
[0060] First, the light-emitting chip used in this embodiment is an AlGaInP-LED epitaxial wafer, which is composed of a light-transmitting layer, a light-emitting layer, a reflective layer and a substrate, and the thickness of the light-emitting chip is 200 μm to 1000 μm. The lower surface of the light-emitting chip is thinned and polished by mechanical thinning and polishing or chemical thinning and polishing or a combination of mechanical and chemical methods, and the light-emitting chip after thinning is 20-300 μm.
[0061] Secondly, the material of the protective film prepared on the upper surface of the light-emitting chip is silicon dioxide or silicon nitride or a composite film compo...
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