Active device and active device array substrate

Abstract

The invention provides an active device and an active device array substrate. The active device array substrate comprises a substrate and a plurality of active devices located on the substrate. At least one of the active devices comprises a first transistor and a second transistor, wherein the first transistor is located on the substrate and provided with a first channel layer; the second transistor is stacked on the first transistor and provided with a second channel layer; the first transistor and the second transistor share a common grid electrode; and the common grid electrode is located between the first channel layer and the second channel layer.

Description

technical field [0001] The present invention relates to an active element and an active element array substrate, and in particular to a dual-channel active element and an active element array substrate. Background technique [0002] In recent years, with the rapid development of electronic technology, thin film transistor liquid crystal display (Thin Film Transistor Liquid Crystal Display, TFT LCD) with superior characteristics such as high image quality, good space utilization efficiency, low power consumption, and no radiation has gradually become the market choice. mainstream. [0003] With the requirement of large-area and high-resolution thin-film transistor liquid crystal displays, thin-film transistors must have high-mobility carriers, thus driving thin-film transistors to shorten their charge and discharge times. Generally, considering high mobility, high stability and low cost, the semiconductor layer of the TFT in the driving circuit can be made of amorphous silic...

AI Technical Summary

Problems solved by technology

However, the double gate structure needs to include thin film transistors with front channel and back channel. The back channel is easy to cause damage to the channel layer during the manufacturing process, so the current of the double gate structure is easy to attenuate. Factors that cause the effect of opening current boost to be limited

In addition, this method cannot integrate the circuit layout to achieve the effects of reduced device area, increased pixel aperture ratio, and high brightness.

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