The preparation method of ito electrode and the ito electrode prepared by the method

A technology of electrodes and conductive layers, applied in the direction of cable/conductor manufacturing, circuits, electrical components, etc.

Active Publication Date: 2016-04-13
SHENZHEN O FILM TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The deformation of this ITO can be found under normal light and viewing angles, and this phenomenon cannot be accepted by high-quality display touch products

Method used

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  • The preparation method of ito electrode and the ito electrode prepared by the method
  • The preparation method of ito electrode and the ito electrode prepared by the method

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Embodiment Construction

[0027] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. Preferred embodiments of the invention are shown in the accompanying drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0028] It should be noted that when an element is referred to as being “fixed” to another element, it can be directly on the other element or there can also be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or intervening elements may also be present.

[0029] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as...

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Abstract

The invention relates to a preparation method for an ITO (Indium Tin Oxide) electrode. The method comprises the steps of firstly forming an ITO conductive layer on a substrate, etching the ITO conductive layer to be a preset pattern, then printing conductive silver paste in the etched area of the ITO conductive layer, baking the conductive silver paste and finally forming an optical cement layer on the surface, opposite to the ITO conductive layer, of the substrate. Since optical cement is flexible, the optical cement layer can be attached onto the surface of the substrate, so that bending deformation caused by stress difference can be made up. Moreover, since the optical refractive index of the optical cement is equivalent to the optical refractive index of the substrate, the bending deformation can be eliminated visually and the goal of relieving the visibility of the surface deformation of the ITO electrode can be achieved. Therefore, the ITO electrode prepared by adopting the method has the advantage that the visibility of the surface deformation can be effectively relieved. Besides, the invention additionally provides the ITO electrode.

Description

【Technical field】 [0001] The invention relates to electronic material technology, in particular to a preparation method of an ITO electrode and an ITO electrode prepared by the method. 【Background technique】 [0002] Tin-doped indium oxide (IndiumTinOxide, referred to as ITO) is an n-type semiconductor material. It is a commonly used transparent conductive material due to its high conductivity, high visible light transmittance, high mechanical hardness and chemical stability. Materials, used in transparent electrodes of various products. In actual application, ITO is first vapor-deposited on a certain substrate by a physical vacuum method to prepare an ITO conductive layer, and then the film is etched into a predetermined pattern as a transparent electrode as required. [0003] In the application of the ITO conductive layer of the PET substrate as an electrode, it is etched into a predetermined pattern. Due to the huge difference between the expansion coefficient of ITO an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B13/00H01B5/14G06F3/044
Inventor 程志政
Owner SHENZHEN O FILM TECH
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