Laser micro hole processing method and laser micro hole processing device

Abstract

The invention belongs to the technical field of semiconductor processing, and discloses a laser micro hole processing method and a laser micro hole processing device, wherein the laser micro hole processing method comprises the steps of setting a laser micro hole processing device, setting a marking point on a to-be-processed work piece, fixing the to-be-processed work piece on a servo platform, then enabling an image positioning system to be aligned to the to-be-processed work piece, identifying the position information of the marking point by the image positioning system, determining the position needs micro hole processing on the to-be-processed work piece through a PC controller, and conducting laser processing. The laser micro hole processing device comprises a platform desk, a laser through-hole machine, the servo platform, the image positioning system and the PC controller, wherein the laser through-hole machine is arranged on the platform desk, a bracket is fixedly arranged on the platform desk, the image positioning system is arranged on the bracket, the servo platform is arranged on the platform desk, and the PC controller is connected with the image positioning system. The laser micro hole processing method and the laser micro hole processing device, provided by the invention, is high in processing efficiency, low in processing cost, and short in processing cycle.

Description

Technical field [0001] The invention belongs to the technical field of semiconductor processing, and in particular relates to a laser micro-hole processing method and laser micro-hole processing equipment. Background technique [0002] The processing of traditional through silicon vias (TSV) is mainly to first make the screens corresponding to the through silicon holes. The screen production covers the entire wafer to expose the corresponding micro holes that need to be made through silicon holes, and then perform gas etching to The coating at the corresponding micropores is removed to meet the technical requirements of through silicon vias. In the prior art, the screen and gas etching method requires the production of corresponding screens for different wafers, which cannot adapt to the processing of diverse wafers, and the wafers need to be corroded by gas. Consuming more production consumables, it has disadvantages such as low processing efficiency, high processing cost, and ...

AI Technical Summary

Problems solved by technology

In the prior art, the method of etching through screen and gas needs to make corresponding screens for different wafers, which cannot adapt to the processing of diverse wafers, and needs to etch wafers through gas, which requires It consumes more production consumables, and has the disadvantages of low processing efficiency, high processing cost, and long processing cycle.

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